3-D Photoresist Etching Simulation Using Cellular Automata

Zaifa Zhou,QingAn Huang,weihuan li,Feipeng Da,Hai P. Shen
DOI: https://doi.org/10.1117/12.668110
2006-01-01
Abstract:The two-dimensional (2-D) dynamic cellular automata (CA) model, for the first time, has been successfully extended in three dimensions for the 3-D simulation of photoresist etching process. The 3-D photoresist etching process has been successfully simulated using the 3-D dynamic CA model when some well-known photoresist etch rate distribution functions are adopted. Simulation results indicate that the 3-D dynamic CA model is fast, accurate and stable. This is identified to be critical useful to the device-sized 3-D lithography process simulation of integrated circuits (IC) and Microelectromechanical System (MEMS).
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