Abstract:For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen–oxygen shallow thermal donors (N–O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide precipitates. However, how the N impurities participate in the growth of grown-in oxide precipitates during the post-anneal remains unclear. Besides, the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates is yet to be revealed. In this work, the effects of pre-anneals at temperatures of 900–1200 °C on the formation of N–O STDs at 650 °C in NCZ silicon have been first investigated. Thus, it has been found that the more significant growth of grown-in oxide precipitates during the pre-anneal, which consumes much more N impurities, leads to forming much fewer N–O STDs. This finding stimulates us to explore the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates. To this end, the capture of N impurities by the oxide precipitates, on the one hand, and the release of N impurities from the oxide precipitates, on the other hand, have been investigated by two systematically constructed experiments. The obtained results enable us to reasonably propose that the N impurities participating in the growth of grown-in oxide precipitates predominately reside at the oxide precipitate/Si interfaces, which reduces the interfacial energies, thus favoring the growth of grown-in oxide precipitates. Such a viewpoint is well supported by the density functional theory calculations. In a word, this work has gained an insight into the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates, starting from exploring the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates.

Effect of Nickel Contamination on Formation of Denuded Zone in Czochralski Silicon

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Effect of Nitrogen Doping on Denuded Zone Formed by Rapid Thermal Process in Czochralski Silicon Wafer

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Effects of Rapid Thermal Processing on Oxide Precipitation in Conventional and Nitrogen‐doped Czochralski Silicon

Internal Gettering of Copper Contamination in Czochralski Silicon

Oxide Precipitate Nucleation at 300 °C in Low Resistivity N-Type Czochralski Si

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Nickel precipitation in large-diameter Czochralski silicon

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Effect Of Rapid Thermal Process On Oxygen Precipitation And Denuded Zone In Nitrogen-Doped Silicon Wafers

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

Effect of Nitrogen on Denuded Zone in Czochralski Silicon Wafer

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Recombination activity of nickel in nitrogen-doped Czochralski silicon treated by rapid thermal processing

Nitrogen-doped Czochralski silicon treated in rapid thermal process

Recombination behavior of nickel in cast multicrystalline silicon