Abstract:It is a formidable challenge to find the minority carrier recombination lifetime in low-dimensional devices as low-dimensionality increases the surface recombination rate and often reduces the recombination lifetime to a scale of picoseconds. In this work, we demonstrated a simple but powerful method to quantitatively probe the minority carrier recombination lifetime in silicon nanowires or microwires by fitting the experimental photoresponses with our recently established analytical photoresponse principle of photoconductors. The nanowires were passivated with small molecules and Al2O3 to suppress surface recombination, which will increase the minority recombination lifetimes. As expected, the minority carrier recombination lifetime found by this approach increases by orders of magnitude. These wires were also made into PIN diodes, the leakage of which was reduced at least 1 order of magnitude after surface passivation by Al2O3. The minority recombination lifetime found from the leakage current of these devices is largely consistent with what we found from our analytical photoresponse principle. As a further step, we performed scanning photocurrent microscopy to find the minority diffusion length from which we found that the minority recombination lifetime is close to what we found from the analytical photoresponses. In short, this work validated that our analytical response principle is a reliable method to find the minority recombination lifetime in low-dimensional semiconductors.

SENSITIVITY ANALYSIS IN MICROWAVE PHOTOCONDUCTANCE DECAY METHOD

A Theoretical Analysis of Sensitivity in Semiconductor Measurement by Microwave Photoconductance Decay

Interaction of microwaves with photoelectrons in semiconductors

Nondestructive Measurement and High-Precision Evaluation of the Electrical Conductivity of Doped GaAs Wafers Using Microwaves.

Measurement of the Thermal Transport Properties of Dielectric Thin Films Using the Micro-Raman Method

R&D of Minority Carrier Lifetime Tester for Semiconductor

Contactless Measurement of Thin Film Conductivity by A Microwave Compact Equipment

Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses

A Versatile System for Photoconductance Decay Measurement Across a Wide Range of Semiconductor Materials

Ultrafast sensing of photoconductivity decay using microwave resonators

Nondestructive measurement of conductivity of doped GaAs using compact microwave instrument

Contactless Measurement of Electrical Conductivity of Semiconductor Wafers Using the Reflection of Millimeter Waves

Contactless Measurement Of Electrical Conductivity Of Si Wafers Independent Of Wafer Thickness

Measuring the Microwave Magnetic Permeability of Small Samples Using the Short-Circuit Transmission Line Method

Thermal conductivity measurement of submicrometer-scale silicon dioxide films by an extended micro-Raman method

Analysis of broadband microwave conductivity and permittivity measurements of semiconducting materials

Quantum Dots Photoluminescence Based Thin Film Thermal Conductivity Metrology

Preliminary Study on Silicon Wafer Characterization Using Quasi-Optical Resonator

Probing Physical Parameters of Low-Dimensional Semiconductor Devices by Analytical Photoresponse Theory

An Experiment Study on AC Conductivity of Conductive Ink Film at Microwave X-band

Effect of the detector parameters on the sensitivity of contactless conductivity detector for microchip electrophoresis