In Situ Instant Generation of an Ultrabroadband Near-Infrared Emission Center in Bismuth-Doped Borosilicate Glasses Via a Femtosecond Laser
Liping Wang,Jiangkun Cao,Yao Lu,Xiaoman Li,Shanhui Xu,Qinyuan Zhang,Zhongmin Yang,Mingying Peng
DOI: https://doi.org/10.1364/prj.7.000300
IF: 7.6
2019-01-01
Photonics Research
Abstract:Bismuth (Bi)-doped photonic materials, which exhibit broadband near-infrared (NIR) luminescence (1000–1600 nm), are evolving into interesting gain media. However, the traditional methods have shown their limitations in enhancing Bi NIR emission, especially in the microregion. Consequently, the typical NIR emission has seldom been achieved in Bi-doped waveguides, which highly restricts the application of Bi-activated materials. Here, superbroadband Bi NIR emission is induced in situ instantly in the grating region by a femtosecond (fs) laser inside borosilicate glasses. A series of structural and spectroscopic characterizations are summoned to probe the generation mechanism. And we show how this novel NIR emission in the grating region can be enhanced significantly and erased reversibly. Furthermore, we successfully demonstrate Bi-activated optical waveguides. These results present new insights into Bi-doped materials and push the development of broadband waveguide amplification.