Broadband L+ near-Infrared luminescence in Bismuth/Germanium co-doped silica glass prepared by the Sol-Gel method
Xin Li,Mengting Guo,Chongyun Shao,Jinming Tian,Fan Wang,Yinggang Chen,Yan Jiao,Chun Yu,Hu Li
DOI: https://doi.org/10.1039/d3tc03396a
IF: 6.4
2023-11-05
Journal of Materials Chemistry C
Abstract:Bismuth (Bi) and Germanium (Ge) co-doped silica glass and fiber, as a novel amplification medium, has attracted extensive attention due to its L+ near-infrared (NIR) luminescence to broaden the communication band. However, the underlying mechanism of bismuth NIR luminescence remains elusive, which posed a constraint on the development of Bi/Ge co-doped silica glass and fiber. In this study, the Bi/Ge co-doped silica glass was prepared by sol-gel method and the influence of Ge and Bi doping concentration on luminescence properties was systematically investigated. Through an analysis of glass network structure, it is found a direct correlation between bismuth near-infrared active luminescence centers (BAC) for L+ band emission and the germanium oxygen vacancy defects (Ge-ODC). A formation mechanism of BAC-Ge was proposed. This paper gives an understanding of bismuth NIR luminescence behavior, especially in the L+ band and serves as a valuable reference for the precise design of bismuth-doped silica fiber for L+ band amplifying application.
materials science, multidisciplinary,physics, applied