Abstract:This study conducts a comparative analysis, using non-equilibrium Green's functions (NEGF), of two state-of-the-art two-well (TW) Terahertz Quantum Cascade Lasers (THz QCLs) supporting clean 3-level systems. The devices have nearly identical parameters and the NEGF calculations with an abrupt-interface roughness height of 0.12 nm predict a maximum operating temperature (Tmax) of ~ 250 K for both devices. However, experimentally, one device reaches a Tmax of ~ 250 K and the other a Tmax of only ~ 134 K. Both devices were fabricated and measured under identical conditions in the same laboratory, with high quality processes as verified by reference devices. The main difference between the two devices is that they were grown in different MBE reactors. Our NEGF-based analysis considered all parameters related to MBE growth, including the maximum estimated variation in aluminum content, growth rate, doping density, background doping, and abrupt-interface roughness height. From our NEGF calculations it is evident that the sole parameter to which a drastic drop in Tmax could be attributed is the abrupt-interface roughness height. We can also learn from the simulations that both devices exhibit high-quality interfaces, with one having an abrupt-interface roughness height of approximately an atomic layer and the other approximately a monolayer. However, these small differences in interface sharpness are the cause of the large performance discrepancy. This underscores the sensitivity of device performance to interface roughness and emphasizes its strategic role in achieving higher operating temperatures for THz QCLs. We suggest Atom Probe Tomography (APT) as a path to analyze and measure the (graded)-interfaces roughness (IFR) parameters for THz QCLs, and subsequently as a design tool for higher performance THz QCLs, as was done for mid-IR QCLs. Our study not only addresses challenges faced by other groups in reproducing the record Tmax of ~ 250 K and ~ 261 K but also proposes a systematic pathway for further improving the temperature performance of THz QCLs beyond the state-of-the-art.

Effect of Doping Concentration on the Performance of Terahertz Quantum-Cascade Lasers

Analyzing the effect of doping concentration in split-well resonant-phonon terahertz quantum cascade lasers

Anomalous Temperature Effect in Weakly Coupled Superlattices: Carrier Transport in a THz Quantum Cascade Laser

Quasi-continuous-wave operation of AlGaAs/GaAs quantum cascade lasers

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes

Dominant Influence of Interface Roughness Scattering on the Performance of GaN Terahertz Quantum Cascade Lasers.

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

The role of different types of dopants in 1.3 <i></i>m InAs/GaAs quantum-dot lasers

High Frequency Modulation and Injection Locking of Terahertz Quantum Cascade Lasers

Directly-coupled Well-Wire Hybrid Quantum Confinement Lasers with the Enhanced High Temperature Performance

Combined resonant tunneling and rate equation modeling of terahertz quantum cascade lasers

High-Power Terahertz Quantum Cascade Lasers Based on High-Al-Composition Four Quantum Wells

Exploring the effects of molecular beam epitaxy growth characteristics on the temperature performance of state-of-the-art terahertz quantum cascade lasers

Effects of Ho3+-Doping Concentration on the Performances of Resonantly Pumped Ho:Yag Ceramic Lasers

Effects of Photon and Thermal Coupling Mechanisms on the Characteristics of Self-Assembled Inas/Gaas Quantum Dot Lasers

High dynamic range, heterogeneous, terahertz quantum cascade lasers featuring thermally-tunable frequency comb operation over a broad current range

Improved comb and dual-comb operation of terahertz quantum cascade lasers utilizing a symmetric thermal dissipation

Terahertz Lasing at Roomtemperature: Numerical Study of a Vertical-Emitting Quantum Cascade Laser Based on a Quantum Dot Superlattice

P -Doped 1.3μm InAs∕GaAs Quantum-Dot Laser with a Low Threshold Current Density and High Differential Efficiency

High Performance 1.3μm InAs/GaAs Quantum Dot Lasers with Low Threshold Current and Negative Characteristic Temperature