Molecular dynamics simulation of specific heat capacities of SiO2 thin films

Zhen-an TANG,Hai-tao DING,Zheng-xing HUANG,Zi-qiang XU,Xin LI
DOI: https://doi.org/10.3321/j.issn:1000-8608.2005.03.001
2005-01-01
Abstract:Due to the difficulties of measurement for the specific heat capacities of nano-films, a model of SiO2(100) thin solid films is constructed based on experimental values and a reliable potential function to present the interaction of atoms is chosen. Specific heat capacity is simulated using molecular dynamics. Size and temperature dependent effects of the films with l-5 nm at 100-600 K are described. The specific heat capacities of SiO2 thin films are evidently smaller than those of bulk materials in the same condition and decrease with the reduction of thickness at 300 K. Meanwhile they increase as temperature becomes higher, which is the case with bulk materials. The microscale effect is revealed and the results are in agreement with some theoretical analysis proposed in others' literatures, which offer a reference for the design of micro-devices.
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