Abstract:ZnO and ZnO thin films doped with different Mg contents (0.81at%,2.43at% and 4.05at%) were fabricated by radio frequency-magnetron sputtering (RF-MS) on glass substrates at 450 °C. The microstructure, photoluminescence (PL), optical and electrical properties were investigated. The results show that ZnO and diluted Mg doped ZnO thin films present a hexagonal wurtzite structure with high crystal quality. In the short wavelength side of near band emission (NBE), a high energy emission band for 0.81at% and 2.43at% Mg doped thin films occurs together with NBE. The increasingly high energy band peak gradually covers the NBE peak with Mg doping increasing to 4.05at%. It is suggested that the energy of the electrons near the substituted Mg2+ increases, and these electrons occupy a higher energy level. However, the energy gap between conduction band and valance band still exists because the electrons energy near the un-substituted Zn2+ does not change. With the increasing doped Mg content, electrons in the higher energy level increase and predominate. Therefore, the reason for the increase in the band gap of Mg doped ZnO thin films can be attributed to the increase in the energy of electrons after Mg doping, together with the Burstein-Moss effect. Incidentally, all films exhibit a high average optical transmission (≥85%). The optical band gap of Mg doped ZnO thin films increases with the increasing Mg doping content and changes from 3.36 to 3.52 eV. The resistivity of the Mg doped films are 2.2×10-3, 3.4×10-3 and 8.1×10-3 Ω·cm for 0.81at%, 2.43at% and 4.05at% Mg contents, respectively.

Progress of Research on Tuneable Wide-Band-gap Semiconductor MgxZn1-xO Thin Films

Recent Advances and Analysis in Research on UV Detectors Based on ZnMgO

Tunable Surface Band Gap In Mgxzn1-Xo Thin Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

Evolution Of Optical Properties And Electronic Structures: Band Gaps And Critical Points In Mgxzn1-Xo (0 X 0.2) Thin Films

The Study of Composition Non-Uniformity in Ternary Mgxzn1-Xo Thin Films

Cubic MgxZn1−xO Films Grown on SiO2 Substrates

Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping

Combinatorial tuning of structure and optoelectronic properties of Zn-Ga-O thin films for deep ultraviolet photodetection

Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In x Ga 1- x ) 2 O 3 Solar-Blind Photodetectors

Preparation and Characteristics of the Wide Gap Semiconductor Mg0.18zn0.82o Thin Film by L-Mbe

Evolution of optical properties and electronic structures: band gaps and critical points in Mg<sub>x</sub>Zn<sub>1−x</sub>O (0 ≤ <i>x</i> ≤ 0.2) thin films

ZnO-based Matierial, Heterojunction and Photoelctronic Device

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Band-gap tunable (Ga x In 1− x ) 2 O 3 layer grown by magnetron sputtering

Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms

Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications

Electrically tunable bandgaps for g-ZnO/ZnX (X = S, Se, Te) 2D semiconductor bilayers

Phase Transition and Bandgap Engineering of MgSnO Thin Films for Solar-Blind Ultraviolet Photodetector Applications

Thin-film transistors based on wide bandgap Ga2O3 films grown by aqueous-solution spin-coating method