Abstract:The thermal low-pressure oxynitridation of Si(100) in N2O has been studied for ultra-thin (<5 nm) SiOxNy films. The nitrogen concentration and depth profiles were accurately determined by secondary ion mass spectrometry. It has been found that small amounts of nitrogen uniformly distribute in the dielectrics, and the kinetics of the oxynitridation (i. e., thickness vs. time) can be accurately expressed as a logarithmic equation. Meanwhile, the electrical properties of the oxynitride films: the average breakdown equivalent fields of dioxide (EBD), the breakdown time (T-BD), the fixed charge (Q(f)), and the interface state density (D-it) have been characterized and analyzed by the current-voltage (I-V), the time-dependent dielectric breakdown, the capacitance-voltage (C-V), and the conductance-frequency (G-W), respectively. The oxynitride films with E-BD approximate to 15.46 MV cm(-1) and T-BD approximate to 2.39 E-4 ms were prepared successfully by processing optimization. The result reveals that the thermal low-pressure oxynitridation is helpful to obtain excellent gate dielectrics with low interface state density (D-it with an order from 2.0 E-9 to 3.0 E-10 ev(-1) cm(-2)). Such a result can be attributed to nitrogen incorporation and slow growth rate during low-pressure processes. It is concluded that the characteristics of the oxynitride films are suitable for applications in metal-oxide-semiconductor and nonvolatile memory devices.

Thermal Stability Of Nitrogen Incorporated In Hfnxoy Gate Dielectrics Prepared By Reactive Sputtering

The characteristics of nitrogen incorporated in HFNXO y gate dielectrics and the effects on the electrical properties

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Thermal Stability Of Tin Metal Gate Prepared By Atomic Layer Deposition Or Physical Vapor Deposition On Hfo2 High-K Dielectric

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

The Post-Deposition Anneal Effects On The Electrical Properties Of Hfo2 Gate Dielectric Deposited By Ion Beam Sputtering At Room Temperature

High Quality of Ultra-Thin SiOxNyFilms Prepared in Nitrous Oxide Ambients Using Thermal Low-Pressure Oxynitridation

Improved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs

Optical Properties of a HfO2/Si Stack with a Trace Amount of Nitrogen Incorporation

The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

Thermal Stability of Carbon Nitride Thin Films Prepared by Electron Cyclotron Resonance Plasma Assisted Pulsed Laser Deposition

Thermal Stability of Tungsten Sub-Nitride Thin Film Prepared by Reactive Magnetron Sputtering

Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices

Influence of NH3 Annealing on the Chemical States of HfO2/Al2O3 Stacks Studied by X-ray Photoelectron Spectroscopy