The characteristics of nitrogen incorporated in HFNXO y gate dielectrics and the effects on the electrical properties

Kang Jin-Feng,Y. H. Yu,Dimlee Kwong
2004-01-01
Abstract:HfOxNy gate dielectric films with different nitrogen incorporated concentrations were fabricated by using reactive sputtering in a Ar/N2/O2 mixture gas ambient at room temperature. The results show that higher nitrogen incorporated concentration results in higher electrical thermal stability. However, bulk Hf-N bonds are not stable during a post-deposition annealing (PDA) in nature due to the low temperature formation process of HfOxNy films. The thermally stable electrical properties could be attributed to the barrier effect of N-Si bonds at HfO 2Ny/Si interface on oxygen diffusion.
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