The Growth And Photovoltaic Properties Of Si Nanowires And Zno Nanowires Hetero-Branched Structures
Ruxue Li,Xiaohua Wang,Xuan Fang,Dongxu Zhao,Haifeng Zhao,Ligong Zhang,Dan Fang,Jinhua Li,Xueying Chu,Jilong Tang,Xiaohui Ma,Zhipeng Wei
DOI: https://doi.org/10.1080/10584587.2016.1175331
2016-01-01
Integrated Ferroelectrics
Abstract:Branched ZnO nanowires have been fabricated on p type Si nanowires by electrodeposition and formed a Si nanowires and ZnO nanowires branched core-shell structure. In these deposition process, Si nanowires could be used as the work electrode for ZnO directly depositing. The morphologies and growth region of ZnO could be controlled by adjusting the applied potential and deposition time. The structural and optical characterizations showed that ZnO nanowires synthesized on Si nanowires have the same physics property as synthesized on other conductive substrates and the optimal condition for ZnO growth. The I-V measurement based on the Si and ZnO p-n heterojunctions showed a typical semiconductor rectification characteristic, and the J-V measurement result indicated energy efficiency was 1.1%.