Abstract:Czochralski (CZ) silicon is a base material for manufacturing integrated circuits (ICs). The mechanical strength of CZ silicon determines the processing limitations and often dominates the issues related to packaging and failure of ICs. With the ever-smaller feature size of ICs, the scaling of device dimensions may indirectly lead to increase the stress in silicon substrate, thus increasing the probability of generating dislocations. Consequently, improving the mechanical strength of CZ silicon is of significance for increasing the manufacturing yield of ICs. In this work, we propose a strategy of co-doping germanium (Ge) impurity and nitrogen (N) impurity into CZ silicon to achieve better mechanical strength. In order to explore the feasibility of such a strategy, we comparatively investigate the room-temperature hardness and dislocation gliding behaviors in the temperature range of 600–1200 ℃ in the conventional CZ silicon, Ge-doped CZ silicon, N-doped CZ silicon, as well as N and Ge co-doped CZ silicon. The significant experimental results are described as follows. 1) Ge-doping, N-doping or co-doping of Ge and N hardly influences the hardness and therefore the dislocation gliding behavior at room temperature. 2) The suppressing effect of N-doping on the dislocation gliding is remarkable at 600–1000 ℃ and becomes weakened at the temperatures higher than 1100 ℃, while Ge-doping hardly affects the dislocation gliding at 600–900 ℃ but exhibits a strong suppressing effect on the dislocation gliding at 1000–1200 ℃. 3) Co-doping Ge and N impurities into CZ silicon can take the complementary advantages of both Ge- and N-doping to suppress the dislocation gliding at 600–1200 ℃. It is believed that N-doping can result in the formation of N-O complex-related pinning agents within the dislocation cores to suppress the dislocation gliding at 600–1000 ℃. For Ge-doping, it is supposed that Ge-O complexes acting as the pinning agents can form near the front of a single dislocation when the temperature is as high as 1000 ℃ and above. In a word, it is verified in this work that co-doping Ge and N into CZ silicon can further improve the mechanical strength at the processing temperatures of ICs fabrication.

Effect of Doped Impurities on Hardness of Silicon Single Crystal

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Mechanical Strength of Czochralski Silicon Crystal: Effects of Co-Doping Germanium and Nitrogen

Comparison on Mechanical Properties of Heavily Phosphorus- and Arsenic-Doped Czochralski Silicon Wafers

Crack Healing Behavior of 4H-Sic: Effect of Dopants

Deformation of 4H-SiC: The role of dopants

Mechanical strength of nitrogen-doped silicon single crystal investigated by three-point bending method

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Effects of Anisotropy on Single Crystal Silicon in Polishing Non-Continuous Surface

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Nano-indentation Experiments on Anisotropic Mechanical Properties of Single Crystal Silicon

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

The aggregation phenomenon of impurity atoms in Si and the properties of C-doped Si studied by first-principle calculations

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation