A Writable,Erasable and Readable Molecular-Based Electrical Bistable Device

徐伟,郭鹏,吕银祥,刘春明,蔡永挚,华中一
DOI: https://doi.org/10.3969/j.issn.1672-7126.2004.06.001
2004-01-01
Abstract:We report a molecular-based electrical bistable device Ag/BN4/Al, where BN4 is a new molecular material. The device exhibits a high-resistance state (> 10 5 Ω) upon a higher voltage (e.g. 6 V), whereas it retains a low-resistance state (≈ 10 2 Ω) when applying a lower voltage (< 2 V), the resistance ratio of the two states is about 10 3-10 5. Changing the voltage applied, the two states can be inverted more than 10 3 times, indicating that the device is either writable or erasable. Furthermore, the high-resistance and low-resistance states can be read by a lower bias (0.2 V). Such a simple device may promise its usage in molecular switch and molecular memory.
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