A Molecular-based Electrical Bistable Device

CAI Yong-zhi,GUO Peng,LAN Bi-jian,ZOU Zhen-guang,LU Yin-xiang,XU Wei
DOI: https://doi.org/10.3969/j.issn.0427-7104.2006.03.016
2006-01-01
Abstract:It is reported a kind of molecular-based electrical bistable device Al/BN4/Al/BN4/Al,where a thin metal layer is embedded within the organic material as the active medium.The device exhibits a high-resistance state(10~6—10~9 Ω) under a lower voltage,whereas it retains a low-resistance state(10~2—10~5 Ω) upon a higher voltage.The resistance ratio of the two states is about 10~3—10~5.Furthermore,the situations of different depth of the active medium have also been compared.
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