A Comparative Study on Diode-Pumped Continuous Wave Tm:Ho:Yvo4 and Tm:Ho:Gdvo4 Lasers
B. Q. Yao,F. Chen,C. T. Wu,Q. Wang,G. Li,C. H. Zhang,Y. Z. Wang,Y. L. Ju
DOI: https://doi.org/10.1134/s1054660x11050306
IF: 1.2
2011-01-01
Laser Physics
Abstract:In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO 4 microchip laser and Tm:Ho:GdVO 4 microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO 4 laser and Tm:Ho:GdVO 4 laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO 4 laser, Tm:Ho:YVO 4 laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO 4 laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO 4 laser.