M2≤1.14 Diode-pumped Yb∶YAG Microchip Laser

吴海生,闫平,巩马理,柳强,刘敏,谢韬
DOI: https://doi.org/10.3321/j.issn:0258-7025.2002.11.001
2002-01-01
Abstract:A diode-pumped Yb:YAG microchip laser with good beam quality was presented. At room temperature, 91.5 mW output power at 1.049 μm was obtained with 10 at.-% doped Yb:YAG microchip crystal and 1 W InGaAs diode. The slope efficiency was about 30%. The M2 values were found to be 1.14 and 1.07 in the vertical and horizontal directions respectively. When the crystal was cooled, 111 mW output power and 40% slope efficiency were obtained.
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