Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 μm

P. B. Meng,B. Q. Yao,R. L. Zhou,F. Chen,Y. L. Ju,Y. Z. Wang
DOI: https://doi.org/10.1134/S1054660X11070243
IF: 1.2
2011-01-01
Laser Physics
Abstract:Room-temperature operation of a single longitudinal-mode c -cut Tm(6%), Ho(0.4%):YLF microchip laser is reported. An incident pump power of 713 mW is used to generate the maximum single-frequency output power of 17 mW at 2050.5 nm, which corresponds to the slope efficiency of 10%.
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