Thermochemical hole burning on DPA(TCNQ)2 and MEM(TCNQ) 2 charge transfer complexes using a scanning tunneling microscope

XueChun Yu,Ran Zhang,Hailin Peng,Chunbo Ran,Yingying Zhang,Zhong Fan Liu
DOI: https://doi.org/10.1021/jp0468206
2004-01-01
Abstract:A thermochemical hole burning (THB) effect was observed on two organic charge transfer complexes, when applying a suitable voltage pulse using a scanning tunneling microscope (STM), which is closely related to a STM current-induced localized thermochemical decomposition of the charge-transfer complex. The decomposition reaction evolves the low boiling point decomposition components of the charge-transfer complex, leaving a nanometer-sized hole on the crystal surface. This effect demonstrates the possibility of creating an ultrahigh-density THB memory, in which information bit is recorded as a hole.
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