Abstract:Topological crystalline insulator (TCI) is a recently-discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular beam epitaxy to grow 12 double layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)2Te3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DL Sn0.9Cr0.1Te film is ~ 110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predicted quantized value (~1/4 h/e2). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Anisotropic Thermochemical Hole Burning Phenomenon on TTF-TCNQ Single Crystal

Thermochemical Hole Burning on TEA(TCNQ)2 Single Crystal at Varied Temperatures in UHV System

Thermochemical Hole Burning Performance of TCNQ-based Charge Transfer Complexes with Different Electrical Conductivities

Thermochemical hole burning on DPA(TCNQ)2 and MEM(TCNQ) 2 charge transfer complexes using a scanning tunneling microscope

Scanning Tunneling Microscope-Based Thermochemical Hole Burning on a Series of Charge Transfer Complexes

Thermochemical Hole Burning on a Triethylammonium Bis-7,7,8,8-tetracyanoquinodimethane Charge-Transfer Complex Using Single-Walled Carbon Nanotube Scanning Tunneling Microscopy Tips

Thermochemical hole burning on a series of N-substituted morpholinium 7,7,8,8-tetracyanoquinodimethane charge-transfer complexes for data storage.

Scanning‐Tunneling‐Microscopy Based Thermochemical Hole Burning on a New Charge‐Transfer Complex and Its Potential for Data Storage

Comparative about the STM Thermochemical Hole Burning of DEA (TCNQ)2 and TEA (TCNQ)2

Nanometer-scale fabrication and data storage on charge transfer complex TEA(TCNQ)2 single crystal

&Lt;title>nanometer-Scale Fabrication and Data Storage on Charge Transfer Complex TEA(TCNQ)2 Single Crystal</title>

STM Thermochemical Hole Burning Memory - Influence of Pulse Voltage and Duration on Hole Size

Influence of Decomposition Temperature on the Threshold Voltage for a Series of Charge Transfer Complexes

Nernst Effect in Oxygen-Depleted SmBa2Cu3O6+x Single Crystals

Organic Charge-Transfer Complexes for Stm-Based Thermochemical-Hole-Burning Memory

Lattice Distortion and Charge Density Wave in Na2Ti2Sb2O Revealed by Scanning Tunnelling Microscopy

Interplay Between Crystal Field and Magnetic Anisotropy in the Triangular-Lattice Antiferromagnet NaTmTe2

Anomalous thermal transport in metallic transition-metal nitrides originated from strong electron-phonon interactions

Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films

Real-space hole-doping titration and manipulation of correlated charge density wave state in 1T-TaS2

Perturbing the spin state and conduction of Fe (II) spin crossover complexes with TCNQ