Abstract:Chalcogenide phase-change materials (PCMs) are regarded as the leading candidate for storage-class non-volatile memory and neuro-inspired computing. Recently, using the TiTe_2/Sb_2Te_3 material combination, a new framework - phase-change heterostructure (PCH), has been developed and proved to effectively suppress the noise and drift in electrical resistance upon memory programming, largely reducing the inter-device variability. However, the atomic-scale structural and chemical nature of PCH remains to be fully understood. In this work, we carry out thorough ab initio simulations to assess the bonding characteristics of the PCH. We show that the TiTe_2 crystalline nanolayers do not chemically interact with the surrounding Sb_2Te_3, and are stabilized by strong covalent and electrostatic Ti-Te interactions, which create a prohibitively high barrier for atomic migrations along the pulsing direction. We also find significant contrast in computed dielectric functions in the PCH, suggesting possible optical applications of this class of devices. With the more confined space and therefore constrained phase transition compared to traditional PCM devices, the recently introduced class of PCH-based devices may lead to improvements in phase-change photonic and optoelectronic applications with much lower stochasticity during programming.

Thermochemical Hole Burning Performance of TCNQ-based Charge Transfer Complexes with Different Electrical Conductivities

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Anisotropic Thermochemical Hole Burning Phenomenon on TTF-TCNQ Single Crystal

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Thermochemical hole burning on a series of N-substituted morpholinium 7,7,8,8-tetracyanoquinodimethane charge-transfer complexes for data storage.

Thermochemical Hole Burning on TEA(TCNQ)2 Single Crystal at Varied Temperatures in UHV System

Organic Charge-Transfer Complexes for Stm-Based Thermochemical-Hole-Burning Memory

Scanning‐Tunneling‐Microscopy Based Thermochemical Hole Burning on a New Charge‐Transfer Complex and Its Potential for Data Storage

STM Thermochemical Hole Burning Memory - Influence of Pulse Voltage and Duration on Hole Size

Comparative about the STM Thermochemical Hole Burning of DEA (TCNQ)2 and TEA (TCNQ)2

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Nanometer-scale fabrication and data storage on charge transfer complex TEA(TCNQ)2 single crystal

&Lt;title>nanometer-Scale Fabrication and Data Storage on Charge Transfer Complex TEA(TCNQ)2 Single Crystal</title>

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory

Influence of Decomposition Temperature on the Threshold Voltage for a Series of Charge Transfer Complexes

Real-space hole-doping titration and manipulation of correlated charge density wave state in 1T-TaS2

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Novel two-dimensional tetragonal monolayer: metal-TCNQ networks.

Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure

Improvement of Multilevel Memory Performance of MnTe Thin Films by Ta Doping