Abstract:Enhanced 395nm ultraviolet photoluminescence (PL) has been obtained from the SiO2/Ge SiO2/ SiO2 sandwiched structure. As light source for optical data storage system, this structure will be very useful in optoelectronic integration. Simultaneously, infrared light emission peaked at 780nm was also observed in this novel structure. In this paper, we discussed the origin of the infrared PL in terms of infrared spec- troscopy (FT-IR) and FL excitation (PLE) spectra. The constancy of the 780nm PL band with annealing temperature does suggest that it can not arise from both the quantum confinement on Ge, Si nanocrystals and the oxygen deficient defects of Ge and Si, because PL from these radiative centers all have peak shifts to some extent. The experimental results from FT-IR strongly suggest that the Ge-O-Ge vibration intensity and the 780nm PL intensity have a similar behavior with annealing temperature. So it is reasonable to be- lieve that the infrared PL band is very related to Ge oxides. Further PLE examination results indicate that it has the similar excitation process to the 395nm ultraviolet PL which comes from TⅡ'(T)→S0 optical transitions in GeO color centers, which has been confirmed by many research groups. So we believe that the 780nm PL should also originate from GeO color centers. The schematic diagram of electronic states of GeO molecule is presented to describe the carriers' excitation and recombination process in this kind of centers. The TⅡ'→S0 optical transitions in GeO color center is responsible for the infrared PL. In GeO molecules, all radiative transitions are intramolecular. Thus the PL bands from the GeO color centers are hardly influ- enced by the SiO2 network. That is why 780nm infrared PL has no wavelength change with different annealing temperature. Our work paves the way for the sandwiched structure's device applications.

Optical Emission From Siox (X=1.2-1.6) Nanoparticles Irradiated By Ultraviolet Ozone

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Influence of Polar Solvent on Light-Emitting Property of SiO$\mathsf{_{x}}$ ($\mathsf{x = 1.2-1.6}$) Nanoparticles Irradiated by Ultraviolet Ozone

Optical Emission from C60-molecule-coupled Si Nanocrystallites

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

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Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

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Photoluminescent behavior of ZnO nanoparticles in a sandwich-like structure SiOx/ZnO/SiOx

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

A Comparative Study of Ultraviolet Emission with Peak Wavelengths Around 350 Nm from Oxidized Porous Silicon and That from SiO2 Powder

Strong violet emission from Ge–SiO2 co-sputtered films annealed in O2 atmosphere

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Study on Photoluminescence Characteristics of SiOx: Er Thin Films

Photoluminescence and Raman Spectroscopy Study on Oxidized Free-Standing Porous Si

The Role Of N-Si-O Bonding Configurations In Tunable Photoluminescence Of Oxygenated Amorphous Silicon Nitride Films

Photoluminescence and Photoluminescence Excitation Mechanisms for Porous Silicon and Silicon Oxynitride

Photoluminescence study of Si oxide films with different Si-rich degrees

Effective Passivation on Si Nanocrystal Surface by Peroxide