Influence of Substrate Temperature on Structure and Performance of DLC Films Deposited by High-Intensity Pulsed Ion Beam Ablation

梅显秀,刘振民,马腾才

DOI: https://doi.org/10.3969/j.issn.1672-7126.2003.04.002

2003-01-01

Abstract:Diamond-like carbon (DLC) films have been deposited on Si substrates at a substrate temperature form 25°C to 400°C by high-intensity pulsed-ion-beam (HIPIB) ablation of graphite targets. Raman spectroscopy, XPS, XRD and AFM were used to characterize the chemical structure, residual stress, and surface roughness of the DLC films. The XPS quantitative analysis shows that the concentration of the sp3 carbon in the films is about 40% when substrate temperature is below 300°C,With the increase of substrate temperature, however, the concentration of the sp3 carbon decreases from 42.5% at 25°C to 8.1% at 400°C. In other words, the sp3 carbon begins to graphitize when substrate temperature is higher than 300°C. The results of XRD and AFM show that the surface roughness of the films increases and the residual stress decreases with increasing substrate temperatures. Nano-microhardness decreases and frictional coefficient increases with the increase of substrate temperatures. The overall performance of the DLC film deposited at 100°C is the best, with nano-microhardness, surface roughness and frictional coefficient being 22 GPa, 0.75 nm and 0.110, respectively.