Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

Magnetoresistance Decay and Switching-Field Change in SiO2–Ni Dusted Co/Cu/Co Structures

Influence of Cu underlayer on the high-frequency magnetic characteristics of as-sputtered FeCoSiN granular thin films

Resistive Switching and Its Modulating Ferromagnetism and Magnetoresistance of a ZnO-Co/SiO2-Co Film

Magnetodielectric study in SiO2-coated Fe3O4 nanoparticle compacts

Effect of SiO2 on the electromagnetic characteristics of lossy CoFeB-SiO2 nanogranular films

Low Field Giant Magnetoresistance Behavior in Co/Cu92mn8/Co Structures

Out-of-Plane Polarization from Spin Reflection Induces Field-Free Spin-Orbit Torque Switching in Structures with Canted NiO Interfacial Moments

Reversible Ferromagnetic Switching in Zno:(Co,Mn) Powders

Oxygen Manipulation at the Co/SiO 2 Interface and Its Effect on Spin-Dependent Transport Properties

Cu Doping Effect on the Resistive Switching Behaviors of CoFe2O4 Thin Films

Spin Reflection-Induced Field-Free Magnetization Switching in Perpendicularly Magnetized MgO/Pt/Co Heterostructures

Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

Inverse Magnetoresistance Caused by Nano-Nitride-layer Doping at the Inner Interfaces in the Sandwich of Co∕Cu∕Co

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

Magnetization Reversal In Antiferromagnetically Coupled [Pt/Cofeb](N1)/Ru/[Cofeb/Pt](N2) Structures With Perpendicular Anisotropy

Efficient Control of Magnetization Dynamics Via W/CuO$_\text{x}$ Interface

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

Influence of Ferromagnetic Interlayer Exchange Coupling on Current-induced Magnetization Switching and Dzyaloshinskii-Moriya Interaction in Co/Pt/Co Multilayer System

The Influence of Magnetic Field Orientation on the Efficacy and Structure of Ni-W-SiC Coatings Produced by Magnetic Field-Assisted Electrodeposition

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure

Nonpolar Electrical Switching Behavior in Cu–Si(Cu)Ox–Pt Stacks