Fabricaion process and growth characteristics of A1N whiskers by sublimation-recrystallization method
Heping Zhou,Hao Chen,Yaocheng Liu,Yin Wu
IF: 1.292
1998-01-01
Journal of Inorganic Materials
Abstract:Using AlN powders as raw materials and CaO-B2O3 as additives, AIN whiskers were fabricated by a sublimation-recrystallization method. The influences of reaction chamber's structure and temperature gradient on AlN synthetics were inspected, as well as the fabrication mechanism and growth characteristics of AlN whiskers. At the earlier stage of reaction, different morphologies of AlN synthetics such as crystal pillars, whiskers and noncrystalline fibers were produced by VLS mechanism. While at the later stage, VS mechanism occurred, which yielded only AlN whiskers. By XRD and TEM analysis, it was discovered that most AlN whiskers grew on crystal planes {2 (1) over bar (1) over bar 0}, {10(1) over bar l} and {0001}, along crystal axes [2 (1) over bar (1) over bar 0], [10(1) over bar w] and [0001], l=0, 1, 2 and 3, w=0, 1, 2 and 3. But in some whiskers, oblique growth was observed, therefore nonnormality of macroscopic growth direction to growth crystal plane existed.