Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Synthesis of Low-dimensional Nano-structural GaN

Synthesis and Raman scattering of GaN nanorings, nanoribbons and nanowires

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Electronic structures and transport properties of low-dimensional GaN nanoderivatives: A first-principles study

Synthesis, photoluminescence and field emission properties of well aligned/well patterned conical shape GaN nanorods

Characteristics and Fabrication Technology of GaN Nanowire Material

Realization of In-Plane GaN Microwire Array Based Ultraviolet Photodetector with High Responsivity on a Si(100) Substrate

Vapor-solid growth of one-dimensional layer-structured gallium sulfide nanostructures.

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Study on GaN Nanostructures: Growth and the Suppression of the Yellow Emission

GaN nanostructure-based light emitting diodes and semiconductor lasers

Advanced Fabrication of 3D Micro/Nanostructures of Gallium Oxide with a Tuned Band Gap and Optical Properties

Morphologies of one-dimensional GaN nanostructures grown through technology

Field Emission Behavior of Gan Nanoparticles and Nanobelts

Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Low‐Dimensional Te‐Based Nanostructures

Large-scale Fabrication and Luminescence Properties of GaN Nanostructures by a Soft UV-curing Nanoimprint Lithography.

Broadband and ascendant nonlinear optical properties of the wide bandgap material GaN nanowires

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures.