Analysis of XRD for y2O3 doping processing in BaTiO3 ceramics

Jiangquan Qi,Longtu Li,Yongli Wang,Zhilun Gui
2002-01-01
Rare Metal Materials and Engineering
Abstract:Based on the results of XRD analysis and SEM observing of the Y-doped BaTiO3 ceramics sintered at different temperatures, the doping mechanism and semiconducting processing of Y dopant in BaTiO3 are discussed. Upon sintering at low temperatures, Y preferably occupies the Ti-site. With the sintering temperature rises, Y tends to occupy Ba-site. Y-doped BaTiO3 Start to be semiconductorialized when the sample sintered at 1220degreesC. The maximum lattice parameters of Y-doped BaTiO3 will be achieved when it sintered at 1 250degreesC for the minimum vacancy concentration.
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