Two-steps Method Etching Pretreatment at Cemented Carbide of YG6 Grade Substrate for Diamond Coatings

Sha Liu,Danqin Yi,Zhiming Yu,Bin Lü,Jianhua Wang,Yongxia Li,Dan Zou
DOI: https://doi.org/10.3321/j.issn:1002-185x.2002.02.008
2002-01-01
Rare Metal Materials and Engineering
Abstract:A two-steps method of etching pretreatment on YG6 grade carbide substrate was investigated in this work: the first step, using Murakami reagent for 5similar to15 min prior to HF CVD to etching WC phase; the second step, using the solution of H2O2 : H2SO4=7 : 3 for 10similar to25 min to remove the Co phase. The results show that to Co content of the substrate surfaces could be reduced from 6% to 0. 54%similar to3.22% within the etching depth of 6similar to12 mum, the substrate surface roughness Ra was increased up to 1.0 mum, as well as, the substrates hardness was decreased from 89.9 HRA to 88.1 HRA after etching. A slight preference towards {111} orientation can be observed from the XRD patterns and SEM micrograph of the diamond film on WC-6% Co sample. The indentation testing shows that a good adhesion between the diamond film and the substrate after HF CVD could be obtained.
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