Aperture Design of Nano-Aperture Semiconductor Laser

徐铁军,王佳,孙利群,许吉英,田芊
DOI: https://doi.org/10.3321/j.issn:0253-2239.2002.12.003
2002-01-01
Abstract:The near-field distributions of nano-aperture semiconductor lasers with different shapes and dimensions were characterized by the method of 3-D finite-difference time-domain (FDTD). The calculation result reveals that the light intensity peak of the C-aperture is increased about 1000 times or more than that of the normal square or circular aperture with a comparable spot size and there is on obvious increase in power throughput. The maximum of the field enhancement occurs at the aperture size corresponding to one third of wavelength. This kind of nano-aperture semiconductor lasers can be used for the high density optical data storage, near field super resolution imaging and nano-photolithography.
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