Fabrication and Temperature Dependence of the Resistance of Single-Crystalline Bi Nanowires

XF Wang,J Zhang,HZ Shi,YW Wang,GW Meng,XS Peng,LD Zhang,J Fang
DOI: https://doi.org/10.1063/1.1352562
IF: 2.877
2001-01-01
Journal of Applied Physics
Abstract:Single-crystalline Bi nanowires with diameters ranging from 20 to 70 nm were prepared by electrodeposition using nanoporous aluminum oxide membranes rather than the more usual track-etched polycarbonate membranes. X-ray diffraction and selected area electron diffraction investigations revealed that the nanowires are essentially single crystalline and highly oriented. The temperature dependence of zero-field resistance of different diameter nanowires indicated that these Bi nanowires undergo a semimetal–semiconductor transition due to two-dimensional quantum confinement effects. The resistance maximum was observed at 50 K in zero magnetic field for 20 nm Bi nanowires, while the resistance minimum at 258 K for 50 nm Bi nanowires, due to the quantum size effect.
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