Diameter-dependent electrical transport properties of bismuth nanowire arrays

Liang Li,Youwen Yang,Xiaosheng Fang,Mingguang Kong,Guanghai Li,Lide Zhang
DOI: https://doi.org/10.1016/j.ssc.2006.12.012
IF: 1.934
2007-01-01
Solid State Communications
Abstract:Single-crystalline bismuth nanowire arrays with different diameters were fabricated within porous anodic alumina membranes with the same pore size using the pulsed electro-deposition technique. X-ray diffraction measurements show that the as-synthesized nanowires have a highly preferential orientation. Scanning electron microscopy, transmission electron microscopy and high-resolution transmission electron microscopy analyses indicate that bismuth nanowire arrays are high filling, ordered and single-crystalline. Electrical resistance measurements show that the bismuth nanowires have a metal–semiconductor transition when the diameters decrease from 90 to 50 nm, and the resistance behaviors are explained on the basis of the quantum confinement effect and Matthiessen’s rule.
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