Interaction Between Aluminum Deposited by Evaporation and Teflon Af Film

SJ Ding,PF Wang,W Zhang,JT Wang,YW Zhang,ZF Xia
DOI: https://doi.org/10.3321/j.issn:0412-1961.2001.03.005
IF: 1.797
2001-01-01
ACTA METALLURGICA SINICA
Abstract:With the aid of X-ray photoelectron spectroscopy (XPS), the interaction between aluminum deposited by evaporation and Teflon AF film has been studied. Analyses of high-resolution Al2p, Ols, Cls and Fls spectra reveal the formations of aluminum fluoride (AlxFy) and a C-O-Al organocomplex at the interface of Al/Teflon AF. Considering a decrease in CF3 groups and an increase in CF2 groups in the sample of Al/Teflon AF in comparison with Teflon AF film, we believe that fluorine in AlxFy results mainly from fluorine atoms produced from one C-F bond breaking of CF3 group. Meanwhile, the recombination between the produced CF2 free radicals and other free radicals leads to an increase in CF2 groups at the interface.
What problem does this paper attempt to address?