Abstract:Activation of shallow acceptor state has been observed in ion irradiated and subsequently air annealed polycrystalline ZnO material. Low temperature photoluminescence (PL) spectrum of the sample exhibits clear signature of acceptor bound exciton (ABX) emission at 3.360 eV. The other two samples, pristine and ion irradiated (without annealing), however, do not show acceptor related PL emission in the nearby energy region. Electron transition from shallow donor (most probable site is interstitial zinc for undoped ZnO) to such newly formed shallow acceptor state creates new donor-acceptor pair (DAP) luminescence peak ~ 3.229 eV. ABX and DAP peak energy positions confirm that the acceptor is N related. The acceptor exciton binding energy has been estimated to be 180 +/- 15 meV which is in conformity with earlier reports. The activation of shallow acceptors without any source of atomic nitrogen can only be possible through diffusion of molecular nitrogen inside the sample during annealing. The N2 molecules get trapped at bulk defect sites incorporated by ion irradiation and subsequent annealing. X-ray diffraction (XRD) and Raman spectroscopic (RS) investigation have been employed to probe the changing defective nature of the ZnO samples. Irradiation induced increased disorder has been detected (both by XRD and RS) which is partially removed/modified by annealing at 300 oC. Simultaneous activation of molecular nitrogen acceptor in purposefully defective ZnO is the key finding of this work. Results presented here provide a simple but controlled way of producing shallow acceptor state in ZnO. If optimized through suitable choice of ion, its energy and fluence as well as the annealing temperature, this methodology can trigger further scope to fabricate devices using ZnO epitaxial thin films or nanowires.

FP-LMTO study on the native shallow donor in ZnO

Electronic Structure of ZnO and Its Defects

Shallow Donor Ionization Energy in Sn-Doped ZnO Nanobelts

Optical Fingerprints of Donors and Acceptors in High-Quality Nh3-Doped Zno Films

Studies of the Mechanism of Electrical Conduction in As-doped ZnO by Structural and Chemical-Bonding Analyses and First Principle Calculations

H-Stabilized Shallow Acceptors In N-Doped Zno

Native Point Defect States in ZnO

Manipulation of Subsurface Donors in ZnO

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

Defect-induced Magnetism in Undoped Wide Band Gap Oxides: Zinc Vacancies in ZnO As an Example

Contributions to the optical linewidth of shallow donor-bound excitonic transition in ZnO

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Binding energies of shallow donors in polar ZnO/ZnBeO quantum well

Study on Vacancy Znic Oxide with the First Principle Plane-wave Pseudopotential

Isolation of Single Donors in ZnO

Shallow acceptor state in ZnO realized by simple irradiation and annealing route

First-Principles Study of Magnetic Properties in V-Doped Zno

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

Experimental Investigation on Nitrogen Related Complex Acceptors in Nitrogen-Doped ZnO Films