HIGH TEMPERATURE OXIDATION AND CORROSION OF SiC-BASED MATERI ALS

Mu PAN,Cewen NAN

DOI: https://doi.org/10.3969/j.issn.1002-6495.2000.02.012

2000-01-01

Abstract:The development of research on oxidation of SiC-based materials is reviewed. The oxidation mechanism and the effect of environment are discussed.

What problem does this paper attempt to address?

Microstructure and oxidation behavior of SiOC coatings on C/C composites co-deposited with HMDS and TEOS by using CVD process

Junjie Yan,Xiumei Wu,Qidong Liu,Yunping Li,Shu Yu

DOI: https://doi.org/10.1016/j.ceramint.2023.12.117

IF: 5.532

2023-12-01

Ceramics International

Abstract:Silicon oxycarbide (SiOC) coatings were prepared through isothermal chemical vapor co-deposition by using two precursors of hexamethyldisilane (HMDS) and tetraethyl orthosilicate (TEOS). The microstructure, composition and the protectiveness on C/C composite against oxidation of the coatings prepared at temperatures ranging from 1423 K to 1563 K and pressures ranging from 500 Pa to 1200 Pa were investigated, respectively. After oxidation, cracks and defects were formed in the coatings of all conditions due to the volume shrinkage of amorphous SiO2 crystallization and the mismatch of thermal expansion coefficient (CTE) between SiOC coatings and substrate. The most oxidation-resistant SiOC coating was obtained at 1563 K and 500 Pa, which exhibited the lowest weight loss rate of 4.87 % after 12 h of oxidation at 1673 K in air condition.

materials science, ceramics
Oxidation Behavior of SiC/SiC Composites in Air at High Temperature

Hong Zhi-liang,Zhang Qiao-jun,Li Kai-yuan,Guo Hong-bao,Zhang Cheng-yu,Liu Yong-sheng

DOI: https://doi.org/10.11868/j.issn.1001-4381.2020.001169

2021-01-01

Abstract:As one of important candidates for advanced aerocraft engine hot components, SiC/SiC composites would undergo oxidative and corrosive damage when subjected to high temperature combustion environment. Oxidation behavior of SiC/SiC composites at 1100-1300 degrees C in air was investigated in the present work, to clarify the oxidative and corrosive behavior of the composites. The oxidation kinetics curves were obtained. The morphology and composition evolution of the oxidized materials were analyzed by SEM, XPS and XRD. The results show that the oxidation kinetics of SiC/SiC composites at 1100-1300 degrees C follow the parabolic law and the oxides on the surface mainly consist of silica. Slight oxidation occurs at 1100 degrees C. The oxidation rate increases with increasing temperature. The oxidation process is mainly concentrated in the BN interface phase and the pores of the matrix. The bending strength of the composite decreases with the oxidation extent.
The Degradation Behavior of C/Sic Composites in Complex Environment

Xiaochong Liu,Laifei Cheng,Litong Zhang,Hui Mei,Zhiqiang Fu,Donglin Zhao,Xingang Luan,Zhiliang Hong,Zhonghua Li

DOI: https://doi.org/10.1016/j.msea.2012.03.053

2012-01-01

Abstract:The advanced high temperature composites have been considered as structural or functional material in complex and harsh environments, which usually comprise of various oxidizing particles such as molecular oxygen (MO), atomic oxygen (AO) and molecular water. This study aimed to investigate C/SiC behaviors in single factor or combination environments. In the MO oxidation, an inert surface is formed on SiC. At the AO oxidation, the Si of SiC is preferentially etched off leaving a certain depth of C layer on the sample. Two types of coupled oxidations defined as mode A (first MO and then AO oxidation), and mode B oxidation (first AO and then MO oxidation) were investigated systematically in this study, and found that the prior oxidative effect majorly determined the corresponding coupled oxidation behavior. From microscopic observation and fractural test, the mode B oxidation induced a more serious degradation upon the material than that of the mode A, which is illustrated by the proposed erosion mechanisms for the modes A and B. (C) 2012 Elsevier B.V. All rights reserved.
Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Qing Xie,Xiao Liu,Shuguang Zhou,Lei Zeng,Bo Dai,Qiang Xu,Nina Ge

DOI: https://doi.org/10.1021/acsami.4c12392

2024-10-03

Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.
Influence of Oxidation Damages on Mechanical Properties of SiC/SiC Composite Using Domestic Hi-Nicalon Type SiC Fibers

Enze Jin,Denghao Ma,Zeshuai Yuan,Wenting Sun,Hao Wang,Jiajia Zhang,Xiaodong Gong,Lina Huang,Botao Han,Xin Sun,Zhihai Feng,Junping Li

DOI: https://doi.org/10.1155/2020/8840963

2020-12-08

Scanning

Abstract:Here, we show that when the oxidation treatment temperature exceeded 600°C, the tensile strength of SiC/SiC begins to decrease. Oxidation leads to the damages on the PyC fiber/matrix interface, which is replaced by SiO2 at higher temperature. The fracture mode converts from fiber pull-out to fiber-break as the fiber/matrix interface is filled with SiO2. Oxidation time also plays an important role in affecting the tensile strength of SiC/SiC. The tensile modulus decreases with temperature from RT to 800°C, then increases above 800°C due to the decomposition of remaining CSi x O y and crystallization of the SiC matrix. A special surface densification treatment performed in this study is confirmed to be an effective approach to reduce the oxidation damages and improve the tensile strength of SiC/SiC after oxidation.
Effect of oxidation on internal friction behavior of C/SiC composites

HONG Zhiliang,CHENG Laifei,ZHAO Chunnian,ZHANG Litong,WANG Yiguang

DOI: https://doi.org/CNKI:11-1801/TB.20130118.1353.040

2013-01-01

Abstract:The effect of oxidation on internal friction behavior of C/SiC composites was investigated to lay foundation for evaluating the oxidation behavior using the internal friction, by analyzing the change of the porosity, mass, flexural strength, phase, microstructure and also measuring the internal friction by thermal mechanical analyzer during oxidation at elevated temperature (1250, 1300 and 1350°C) in air. The relationship between oxidation and internal friction for SiC ceramics was also studied at 1300°C in air, to clarify the affect of oxidation of each component in C/SiC on the internal friction behavior. The results show that the effect of oxidation on internal friction for SiC is irregular and weak; the internal friction behavior of C/SiC is controlled obviously by the oxidation of carbon phase and the peak value of internal friction retention at 1250, 1300 and 1350°C is 6.65, 3.48 and 1.59, respectively.
Static and dynamic oxidation behaviour of silicon carbide at high temperature

Shiyan Chen,Yi Zeng,Xiang Xiong,Huilin Lun,Ziming Ye,Tianxing Jiang,Lingwei Yang,Jun Zhang,Liping Liu,Guolin Wang,Li Jing,Xiangqian Xie,Changhai Yan

DOI: https://doi.org/10.1016/j.jeurceramsoc.2021.04.040

IF: 5.7

2021-09-01

Journal of the European Ceramic Society

Abstract:SiC has extensive applications in high-temperature oxidation environments. However, few studies have investigated the differences between the static and dynamic oxidation behaviour. In this study, the static and dynamic oxidation of SiC were investigated in air and in plasma wind tunnels, respectively. The results demonstrated that the activation energy of static oxidation was ∼68.02 kJ/mol at 1300-1600 ℃, which was approximately ten times that of dynamic oxidation ∼7.05 kJ/mol at 1290-1534 ℃. The observed Si-O-C transition layer located at the SiO2/SiC interface, and its thickness after dynamic oxidation for 300 s was thicker than that after static oxidation for 30 h. In dynamic oxidation, high-speed flowing atomic oxygen reacted directly with SiC, whereas molecular oxygen needed extra energy to break the O-O bond and react with SiC in static oxidation. Atomic oxygen also migrated easier in the amorphous SiO2 coating, contributing to a thicker Si-O-C layer and lower activation energy.

materials science, ceramics
Study on the oxidation mechanism of Al-SiC composite at elevated temperature

Jishuo Han,Yong Li,Chenhong Ma,Qingyao Zheng,Xiuhua Zhang,Xiaofang Wu

DOI: https://doi.org/10.1007/s12613-023-2778-3

2024-09-01

International Journal of Minerals Metallurgy and Materials

Abstract:Resin-bonded Al-SiC composite was sintered at 1100, 1300, and 1500°C in the air, the oxidation mechanism was investigated. The reaction models were also established. The oxidation resistance of the Al-SiC composite was significantly enhanced with temperature increase. SiC in the exterior of the composite was partially oxidized slightly, while the transformation of metastable Al 4 C 3 to stable Al 4 SiC 4 existed in the interior. At 1100°C, Al in the interior reacted with residual C to form Al 4 C 3 . With increasing to 1300°C, high temperature and low oxygen partial pressure lead to active oxidation of SiC, and internal gas composition transforms to Al 2 O(g) + CO(g) + SiO(g) as the reaction proceeds. After Al 4 C 3 is formed, CO(g) and SiO(g) are continuously deposited on its surface, transforming to Al 4 SiC 4 . At 1500°C, a dense layer consisting of SiC and Al 4 SiC 4 whiskers is formed which cuts off the diffusion channel of oxygen. The active oxidation of SiC is accelerated, enabling more gas to participate in the synthesis of Al 4 SiC 4 , eventually forming hexagonal lamellar Al 4 SiC 4 with mutual accumulation between SiC particles. Introducing Al enhances the oxidation resistance of SiC. In addition, the in situ generated non-oxide is uniformly dispersed on a micro-scale and bonds SiC stably.

materials science, multidisciplinary,metallurgy & metallurgical engineering,mining & mineral processing
Effect of high temperature oxidation on mechanical and electromagnetic interference shielding effectiveness of Ti3SiC2 modified SiCf/BN/SiBCN composites

Qifan Wang,Yuqing Peng,Wenqian Jiang,Haiming Xu,Weibin Hai,Qinsi Shao,Aijun Li

DOI: https://doi.org/10.1016/j.ceramint.2024.03.140

IF: 5.532

2024-03-01

Ceramics International

Abstract:SiCf/BN/SiBCN composites were prepared through the technique of polymer infiltration pyrolysis (PIP). To enhance the electromagnetic interference (EMI) shielding effectiveness (SE), 20 wt% of Ti3SiC2 was incorporated into the composites. The study investigated the influence of different oxidation temperatures (1300 °C, 1400 °C, and 1500 °C) on both the mechanical properties and EMI SE of the composites. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were utilized to analyze the phase and microstructure of the composites, while characterizing their mechanical properties and EMI SE. The outcomes revealed a decline in the mechanical properties of the composites following high temperature oxidation, with the formation of SiO2 and TiO2 as the main oxidation products. Notably, an oxide layer formed on the material's surface at 1400 °C acted as a barrier to oxygen diffusion, facilitating self-healing of pores and cracks and thereby enhancing material protection. Moreover, the material oxidized at 1400 °C demonstrated a remarkable synergy between impedance matching and electromagnetic loss, resulting in the optimum EMI SE. The EMI SE of this material was 6.35% higher than the total shielding effectiveness at room temperature and effectively shielded 99.88% of electromagnetic waves.

materials science, ceramics
High Temperature Oxidation Behavior of SiC Coating Materials

ML Liu,YL Shao,B Liu,ZQ Li

2013-01-01

Rare Metal Materials and Engineering

Abstract:SiC layer was prepared in an industrial scale spout fluidized bed by chemical vapor deposition. The density of SiC coating was about 3.18 g/cm(3). High temperature oxidation experiments were carried out at different temperatures from 800 to 1600 degrees C. The microstructure and composition were characterized using different methods, including mass change weighing, XRD, EDS and SEM. It was found that the weight gain of SiC coating layer was not obvious below 1200 degrees C, and subsequent mass gain gradually increased with increasing temperature, reaching 10% at 1600 degrees C. High-magnification SEM results show that the oxidation began from the surface and gradually formed punctate distribution of the oxide. Small crystal structure (similar to micron) of the SiC surface was very clear at 1000 degrees C, and this crystal structure disappeared gradually at high temperatures, forming oxides of Si in the SiC surface. There was a stacking fault stress due to the different thermal expansion coefficients and elastic modulus of SiC and Si oxides, leading to the gradual formation of cracks around the punctates. With increasing temperature, the crack further increased the oxidation rate of SiC, and finally the formed Si oxides layer fell off from the particles. It can be seen clearly that the layer was peeling when the temperature was increased to 1400 degrees C. Increasing the temperature to 1600 degrees C, the SiC coating was oxidized completely into a honeycomb structure, with obvious sintering of SiC. XRD analysis shows that there was a growing SiO2 peaks from 1400 degrees C, indicating that surface oxidation was significant. EDS results shows that the oxygen content in the coating surface gradually increased with increasing temperature. Semi-quantitative analysis shows that the surface was close to SiO2 at 1600 degrees C.
SiC Performance of Coated Fuel Particles under High-Temperature Atmosphere of Air

Chunhe Tang,Bing Liu,Ziqiang Li,Ying Quan,Hongsheng Zhao,Youlin Shao

DOI: https://doi.org/10.1016/j.nucengdes.2013.11.011

IF: 1.7

2014-01-01

Nuclear Engineering and Design

Abstract:To better understand whether the SiC layer can withstand the corrosion given by the chemical reaction between SiC and O-2, our experiments focused mainly on the effect of oxygen on SiC-coated fuel particles at high temperature. Tests were conducted on non-irradiated coated fuel particles in an atmosphere of air over a range of temperatures between 800 and 1600 degrees C.This paper summarizes the failure fractions, surface morphology and microstructure of the SiC coating, etc. The morphology of SiC-coated particles surfaces, optical and scanning electron micrographs and the oxygen distribution of polished SiC layers at 800, 1000 and 1200 degrees C for 200 h under air atmosphere showed that the features of SiC layers did not change in these cases. In contrast with the aforementioned cases, the behavior of SiC layers was deteriorated when the oxidation temperature was beyond 1400 degrees C. More serious the deterioration, higher the oxidation temperature is. The thickness of SiO2 layer from outside to inside SiC layers reached 6 similar to 8 mu m, and a large number of SiC-coated particles were broken into fragment at 1600 degrees C. The experiment results show that the oxidation of the SiC layer proceeds slowly at temperatures around 1400 degrees C and more rapidly as the temperature approaches 1600 degrees C. (C) 2013 Elsevier B.V. All rights reserved.
Solid‐Solution Effects on the High‐Temperature Oxidation Behavior of Polymer‐Derived (Hf,Ta)C/SiC and (Hf,Ti)C/SiC Ceramic Nanocomposites

Qingbo Wen,Ralf Riedel,Emanuel Ionescu

DOI: https://doi.org/10.1002/adem.201800879

IF: 3.6

2018-10-21

Advanced Engineering Materials

Abstract:Abstract In the present study, two concepts to improve the oxidation resistance at high‐temperatures of ceramic nanocomposites consisting of 85–90 vol% SiC, 5–8 vol% group IV metal carbides (i.e., HfC, TaC), and 5–7 vol% carbon are introduced and discussed. First improvement concept relates to the passivation of the samples upon short‐term oxidation at 1400 °C (30 min). This is a critical step, especially with respect to silica formation, which is relatively sluggish at temperatures lower than 1000–1200 °C. Moreover, solid‐solution metal carbides (Hf,Ta)C and (Hf,Ti)C are shown to be clearly more oxidation resistant than the binary HfC and TaC phases. Whereas, the solid‐solution effect contributes to a significant improvement of the short‐term oxidation resistance of the studied nanocomposites, the passivation of the materials prior exposure of high‐temperature oxidation conditions provides a remarkably improved long‐term behavior thereof. Possible mechanisms involved in the oxidation processes of (Hf,Ta)C/SiC and (Hf,Ti)/SiC ceramic nanocomposites are highlighted and critically assessed.

materials science, multidisciplinary
A comparative study on high temperature oxidation behavior of SiC, SiC-BN and SiBCN monoliths

Meng Zhang,Qingqing Chen,Yunpeng He,Yuzhe Hong,Daxin Li,Zhihua Yang,Dechang Jia,Delong Cai,Zibo Niu,Jingyi Guan,Bingzhu Wang

DOI: https://doi.org/10.1016/j.corsci.2021.109855

IF: 7.72

2021-11-01

Corrosion Science

Abstract:In this study, the oxidation behavior and mechanism of SiBCN monoliths were compared with SiC and SiC-BN monoliths. At 1100–1300 °C, the oxide layers of SiC and SiBCN monoliths were relatively smooth and dense, while that of SiC-BN monoliths were destroyed by many bubbles. Further oxidized at 1500 °C, some cracks and bubbles appeared on the surfaces and interfaces of SiC-BN monoliths. The oxidation of SiC phases was thermodynamically unstable than that of C and BN, but the oxidation of BN and/or C occurred preferentially after considering the kinetic factors. BN(C) phase has a positive role on SiBCN oxidation resistance.Data availabilityThe raw/processed data required to reproduce these findings cannot be shared at this time due to legal or ethical reasons.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

Hongfei Gao,Hongjie Wang,Min Niu,Lei Su,Xingyu Fan,Jiangbo Wen,Yin Wei,Hongfei Gao,Hongjie Wang,Min Niu,Lei Su,Xingyu Fan,Jiangbo Wen,Yin Wei

DOI: https://doi.org/10.1016/j.apsusc.2019.07.016

IF: 6.7

2019-11-01

Applied Surface Science

Abstract:Silicon carbide nanowires (SiCNWs) have attracted increasing attention due to their excellent properties and wide range of potential applications. SiCNWs covered with oxide layer, which can be simply prepared by thermal oxidation, show a number of fascinating functional prospects. However, the oxidation mechanism of the SiCNWs is barely explored. Here we studied oxidation of SiCNWs at 300–1500 K by using the reactive molecular dynamics simulations with ReaxFF potential. The temperature-dependent oxidation processes and the obtained structures were discussed in detail. The results reveal that self-limiting oxidation of the SiCNWs can switch from the rate-determining step of chemical reaction at the interface to diffusion limited oxidation after a definite time. In addition, the SiC|C|SiOx core-shell structure was proved to be formed during the oxidation from a theoretical view. A saturation emit mechanism was proposed to explain why the C-rich layer is too thin to be detected. DFT calculations were employed to study electronic structure of the core-shell structures, indicating the SiO2 layer apparently narrows band gaps of the SiCNWs, and the accumulated C at the interface could offset conduction band and valence band, resulting in instability problem during application of the SiCNWs.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Oxidation behavior of SiC‐AlN ceramics exposed to dry oxygen and water oxygen environments at 1100–1300°C

Xiaofan Sun,Xiaowu Chen,Min Tan,Yanmei Kan,Xihai Jin,Zhen Wang,Ning Liu,Jianbao Hu,Jinshan Yang,Shaoming Dong

DOI: https://doi.org/10.1111/ijac.14903

2024-08-27

International Journal of Applied Ceramic Technology

Abstract:The corrosion of SiCf/SiC composites in gas environment threatens their long‐term service in aeroengines as hot‐end structure components. Addition of corrosion‐resistant phases into SiC matrix is a potential strategy to improve the service performance of SiCf/SiC materials. Here, AlN added SiC ceramics were prepared by reactive melt infiltration, and the effect of AlN phase on the oxidation resistance of the ceramics was emphasized. The oxidation tests were performed in dry oxygen and water oxygen atmospheres at 1100°C–1300°C, respectively. The oxidation mechanism was discussed based on the microstructure evolution of the oxide layer. The results show that the oxide layer is composed of aluminum silicate glass and Al2O3 flakes dispersedly distributed in the glass phase. As the temperature rises, the oxide layer gradually grows and thickens. Finally, a smooth and dense protective layer could be formed on the surface of ceramics to resist oxidation. This study can provide a profound insight to construct SiCf/SiC composites with excellent oxidation resistance.

materials science, ceramics
Microstructure and Oxidation Behavior of Metal-Modified Mo-Si-B Alloys: A Review

Laihao Yu,Fuqiang Shen,Tao Fu,Yingyi Zhang,Kunkun Cui,Jie Wang,Xu Zhang

DOI: https://doi.org/10.3390/coatings11101256

IF: 3.236

2021-10-15

Coatings

Abstract:With the rapid development of the nuclear industry and the aerospace field, it is urgent to develop structural materials that can work in ultra-high temperature environments to replace nickel-based alloys. Mo-Si-B alloys are considered to have the most potential for new ultra-high temperature structural material and are favored by researchers. However, the medium-low temperature oxidizability of Mo-Si-B alloys limits their further application. Therefore, this study carried out extensive research and pointed out that alloying is an effective way to solve this problem. This work provided a comprehensive review for the microstructure and oxidation resistance of low silicon and high silicon Mo-Si-B alloys. Moreover, the influence of metallic elements on the microstructure, phase compositions, oxidation kinetics and behavior of Mo-Si-B alloys were also studied systematically. Finally, the modification mechanism of metallic elements was summarized in order to obtain Mo-Si-B alloys with superior oxidation performance.

materials science, multidisciplinary,physics, applied, coatings & films
Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Xiao Shen,Sokrates T. Pantelides

DOI: https://doi.org/10.1063/1.4815962

2012-12-19

Abstract:The oxidation of SiC and Si provide a unique opportunity for studying oxidation mechanisms because the product is the same, SiO2. Silicon oxidation follows a linear-parabolic law, with molecular oxygen identified as the oxidant. SiC oxidation obeys the same linear-parabolic law but has different rates and activation energies and exhibits much stronger face-dependence. Using results from first-principles calculations, we show that atomic and molecular oxygen are the oxidant for Si- and C-face SiC respectively. Comparing SiC with Si, we elucidate how the interface controls the competition between atomic and molecular mechanisms.

Materials Science
Temperature dependence mechanism of high-temperature oxidation of transition metal silicide MoSi2

Yang Huang,Yuhang Zhang,Yusong Wu,Zhikang Yang,Na Wang,Tairan Fu

DOI: https://doi.org/10.1088/1361-648x/ad4b82

2024-05-16

Journal of Physics Condensed Matter

Abstract:Transition metal silicides represented by MoSi2 have excellent oxidation resistance and are widely used as high-temperature anti-oxidation coatings in hot end components of power equipment. However, the mechanism of temperature-dependent growth of MoSi2 oxidation products has not been revealed. Therefore, this study investigated the formation characteristics of oxide film and silicide-poor compound on MoSi2 at temperatures of 1000-1550°C through high-temperature oxidation experiments, combined with microscopic Raman spectroscopy, SEM, and XRD characterizations. The result showed that MoSi2 underwent high-temperature selective oxidation reactions at 1000-1200°C, forming MoO2 and SiO2 oxide film on the substrate. As the oxidation temperature increased to 1550°C, after 100 hours of oxidation, along with the disappearance of MoO2 and the phase transformation of SiO2, a continuous Mo5Si3 layer with a thickness of approximately 47 μm was formed at the SiO2-MoSi2 interface. Thermodynamics and kinetic calculations further revealed the mechanism of temperature-dependent growth of oxidation products (MoO2 and Mo5Si3) during high-temperature oxidation process of MoSi2. As the temperature increased, the diffusion flux ratio of O and Si decreased, leading to a decrease in oxygen concentration at the interface and promoting the growth of the Mo5Si3 layer. Its thickness is an important indicator for evaluating the oxidation resistance of MoSi2 coatings during service. This study provides experimental and mechanistic insights into the temperature-dependent growth behavior of Mo5Si3 during the high-temperature oxidation of MoSi2 coating, and provides guidance for predicting the service life and improving the oxidation resistance of silicide coatings.

physics, condensed matter
In-situ fabrication of MoSi 2 /SiC–Mo 2 C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo 2 C barrier layer at high temperature

jun liu,qianming gong,yang shao,daming zhuang,ji liang

DOI: https://doi.org/10.1016/j.apsusc.2014.04.148

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:•MoSi2/SiC–Mo2C gradient coating on Mo was in situ synthesized in a simple process.•The MoSi2/SiC–Mo2C coating had excellent oxidation resistance at 1600°C in air.•SiC could modulate the thermal expansion mismatch between MoSi2 and Mo.•The Mo2C layer could act as a diffusion barrier of Si and C toward Mo substrate.
Wet oxidation behavior of C/SiC–SiHf(B)CN composites at high temperature

Xingang Luan,Jiahao Zhang,Lei Wang,Qingbo Wen,Zhaoju Yu,Laifei Cheng,Ralf Riedel

DOI: https://doi.org/10.1007/s42114-020-00172-2

IF: 11.806

2020-09-01

Advanced Composites and Hybrid Materials

Abstract:To further improve the oxidation resistance of C/SiC–SiBCN at temperatures over 1200 °C, C/SiC–SiHfCN and C/SiC–SiHfBCN composites were prepared by a new method called chemical vapor infiltration (CVI) combined with polymer infiltration and on-line pyrolysis (PIOP) process. The weight change behavior, mechanical properties, and microstructure of C/SiC–SiHf(B)CN before and after oxidation in wet oxygen were studied in detail. Through the replacement of B by Hf, the weight loss of the composite in high-temperature wet oxygen environment has been significantly reduced. The strength retention of C/SiC–SiHfBCN is up to 75% after oxidation in wet oxygen at 1400 °C and the strength retention of C/SiC–SiHfBCN can reach 85% after oxidation in an atmosphere with high oxygen and water vapor content at 1300 °C. In addition, microscopic analysis showed that after oxidation at 1400 °C, only the fibers in the near-surface matrix were oxidized to some extent and hafnium has been enriched at the composite surface. Our work provides a reference for the study of the oxidation resistance of C/SiC composites in harsh environments.Graphical abstractSchematic diagram of the internal morphology of C/SiC–SiHfBCN composites and its interaction with the service environment.

nanoscience & nanotechnology,materials science, composites

HIGH TEMPERATURE OXIDATION AND CORROSION OF SiC-BASED MATERI ALS

Microstructure and oxidation behavior of SiOC coatings on C/C composites co-deposited with HMDS and TEOS by using CVD process

Oxidation Behavior of SiC/SiC Composites in Air at High Temperature

The Degradation Behavior of C/Sic Composites in Complex Environment

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Influence of Oxidation Damages on Mechanical Properties of SiC/SiC Composite Using Domestic Hi-Nicalon Type SiC Fibers

Effect of oxidation on internal friction behavior of C/SiC composites

Static and dynamic oxidation behaviour of silicon carbide at high temperature

Study on the oxidation mechanism of Al-SiC composite at elevated temperature

Effect of high temperature oxidation on mechanical and electromagnetic interference shielding effectiveness of Ti3SiC2 modified SiCf/BN/SiBCN composites

High Temperature Oxidation Behavior of SiC Coating Materials

SiC Performance of Coated Fuel Particles under High-Temperature Atmosphere of Air

Solid‐Solution Effects on the High‐Temperature Oxidation Behavior of Polymer‐Derived (Hf,Ta)C/SiC and (Hf,Ti)C/SiC Ceramic Nanocomposites

A comparative study on high temperature oxidation behavior of SiC, SiC-BN and SiBCN monoliths

Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

Oxidation behavior of SiC‐AlN ceramics exposed to dry oxygen and water oxygen environments at 1100–1300°C

Microstructure and Oxidation Behavior of Metal-Modified Mo-Si-B Alloys: A Review

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Temperature dependence mechanism of high-temperature oxidation of transition metal silicide MoSi2

In-situ fabrication of MoSi 2 /SiC–Mo 2 C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo 2 C barrier layer at high temperature

Wet oxidation behavior of C/SiC–SiHf(B)CN composites at high temperature