Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition
Yingda Qian,Yuanlan Liang,Xuguang Luo,Kaiyan He,Wenhong Sun,Hao-Hsiung Lin,Devki N. Talwar,Ting-Shan Chan,Ian Ferguson,Lingyu Wan,Qingyi Yang,Zhe Chuan Feng
DOI: https://doi.org/10.1155/2018/5016435
IF: 2.0981
2018-07-08
Advances in Materials Science and Engineering
Abstract:A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants ( n , k , e 1 , and ε 2 ), and critical energy points ( E 1 , E 1 + Δ 1 , E ′ 0 , E 2 , and E ′ 1 ) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.
materials science, multidisciplinary