Annealing Temperature Dependence of Effective Piezoelectric Coefficients for Bi3.15eu0.85ti3o12 Thin Films
X. J. Zheng,Q. Y. Wu,J. F. Peng,L. He,X. Feng,Y. Q. Chen,D. Z. Zhang
DOI: https://doi.org/10.1007/s10853-010-4301-2
IF: 4.5
2010-01-01
Journal of Materials Science
Abstract:The effects of annealing temperatures 600, 650, 700, and 750 °C on microstructure, chemical composition, leakage current, ferroelectric, dielectric, and piezoelectric properties of Bi3.15Eu0.85Ti3O12 (BET) thin films prepared by metal–organic decomposition were studied in detail. The largest spontaneous polarization 2P s (98.7 μC/cm2 under 300 kV/cm), remnant polarization 2P r (81.7 μC/cm2 under 300 kV/cm), dielectric constant εr (889.4 at 100 kHz), effective piezoelectric coefficient d 33 (46.7 pm/V under 260 kV/cm), and lowest leakage current (1.3 × 10−6 A/cm2 under 125 kV/cm) of BET thin film were obtained with annealing at 700 °C. The mechanisms concerning the dependence of the enhancement d 33 are discussed according to the phenomenological equation, and the improved piezoelectric performance could make BET thin film a promising candidate for piezoelectric thin film devices.