Gd Substitution Effect on the Normal-State Transport Properties of Bi2Sr2Ca1−xGdxCu2O8+δ Single Crystals
X Zhao,XF Sun,Y Peng,WB Wu,XG Li
DOI: https://doi.org/10.1016/s0921-4534(01)00912-1
2002-01-01
Abstract:Doping dependence of the anisotropic resistivity and in-plane thermopower have been systematically studied for Bi2Sr2Ca1−xGdxCu2O8+δ single crystals (x=0, 0.09, 0.19, 0.32 and 0.41), whose hole concentration changes from overdoped to underdoped level. For the underdoped crystals, the in-plane resistivity ρab(T) exhibits an obvious downturn from the T-linear behavior at characteristic temperature T*, whose value increases with x, which manifests the opening of the spin gap in the normal state. The c-axis resistivity ρc(T) and the anisotropy ρc(T)/ρab(T) increase rapidly with increasing Gd-doping concentration. The in-plane thermopower S increases monotonously with decreasing the carrier concentration, and its temperature dependence for the underdoped crystals shows a deviation from the T-linear dependence at high temperature region. By assuming a characteristic temperature Tscale where the thermopower S begins to deviate from T-linear behavior, S(T)/S(Tscale) vs. T/Tscale can be well scaled into a universal curve for all the underdoped crystals. The Tscale, which is supposed to relate with pseudogap, shows the similar doping dependence to that of T*. However, there are quantitatively difference between T* and Tscale.