Metal-insulator Transition in Anisotropic Systems with Both Diagonal and Spin-Orientation-dependent Off-Diagonal Disorder

WS Liu,SJ Xiong
DOI: https://doi.org/10.1088/0953-8984/11/6/014
1999-01-01
Journal of Physics Condensed Matter
Abstract:The localization behaviour of the anisotropic extended double-exchange model with both diagonal and spin-orientation-dependent off-diagonal disorder is investigated using the transfer-matrix method. The anisotropy is described by different in-plane and inter-plane hopping integrals. By using a mean-field distribution of the spin orientation, the localization length of electrons is calculated as a function of temperature. It is found that the metal-insulator transition temperature t(MIT) of the system increases with decreasing degree of anisotropy gamma. On the insulating side, the localization length for t close to t(MIT) varies as xi proportional to (t - t(MIT))(-nu). We also calculate the value of nu for various gamma-values. The comparison of the results obtained and the experimental measurements for the layered mixed-valence Mn oxides is discussed.
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