Abstract:Low-disorder and high-mobility two-dimensional (2D) electron (or hole) systems confined in semiconductor heterostructures undergo an apparent metal-insulator transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. The goal of the current work is to obtain the critical density (nc) for the 2D MIT with the system being an effective metal (Anderson insulator) for density n above (below) nc. We study the 2D MIT phenomenon theoretically as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, kFl=1, where kF(n) is the 2D Fermi wave vector and l(n) is the disorder-limited quantum mean free path on the metallic side. Calculating the quantum mean free path in the effective metallic phase from a realistic Boltzmann transport theory including disorder scattering effects, we solve the integral equation (with l depending on n through multidimensional integrals) defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density nc as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the critical density is the density dependence of the screened Coulomb disorder. Our calculated results for the crossover critical density nc appear to be in qualitative and semiquantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We also compare the calculated critical density obtained from the Ioffe-Regel criterion with that obtained from a classical percolation theory, concluding that experiments support the Ioffe-Regel criterion for the 2D MIT crossover phenomena.

Metal–insulator transition in anisotropic system with a random magnetic field

Critical Behavior of a Strongly Disordered 2D Electron System: the Cases of Long-Range and Screened Coulomb Interactions

Metal-insulator Transition in Anisotropic Systems with Both Diagonal and Spin-Orientation-dependent Off-Diagonal Disorder

Metal-Insulator Transition of 2D Electron Gas in a Random Magnetic Field

Kosterlitz-Thouless-Type Metal-Insulator Transition In A Double-Plane System With A Random Magnetic Field

Scaling Behavior of the Metal-Insulator Transition in One-Dimensional Disordered Systems with Long-Range Hopping

Nonequilibrium multicritical behavior in anisotropic Heisenberg ferromagnet driven by oscillating magnetic field

Magnon Transport and Thermal Properties of Confined Anisotropic CrI3

Electron Localization in a Two-Dimensional System with Random Magnetic Flux

Monte Carlo study of the phase transitions in the classical XY ferromagnets with random anisotropy

Numerical Simulations Of Random Spin (And Fermionic) Models With A Wide Distribution Of Energy Scales

First Order Metal-Insulator Transition in Two-Dimensional Disordered Systems

Metal to Marginal-Metal Transition in Two-Dimensional Ferromagnetic Electron Gases

Mobility Edges in Two-Dimensional Aperiodic Potentials

Critical parameters for the one-dimensional systems with long-range correlated disorder

Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon

Metal-Insulator Transition in the Mixed-Valence Manganites

Theory for Magnetic-Field-Driven 3D Metal-Insulator Transitions in the Quantum Limit

Critical behaviours of anisotropic XY ferromagnet in the presence of random field

Generalized Variable Range Hopping Near Two-Dimensional Metal-Insulator Transitions