New expression of excess stress and the stability of buried strained heterostructures

Zhi Jin,Shuren Yang,Haiyan An,Mingtao Li,Shiyong Liu
DOI: https://doi.org/10.1016/S0038-1101(99)00123-9
IF: 1.916
1999-01-01
Solid-State Electronics
Abstract:A new mechanism of strain relaxation in buried strained layers is proposed. According to this mechanism, the mixture of single and paired misfit dislocations appears to relax the misfit strain. The corresponding formula of excess force and stresses is derived. In this formula, the free-surface boundary condition, the interaction and distribution of misfit dislocations are all incorporated. The formula can be applied to arbitrary strained heterostructures. Both single- and double-kink models are some extreme condition of our formula. A formula of the critical thickness of the strained layer is derived. (C) 1999 Elsevier Science Ltd. All rights reserved.
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