Abstract:Non-radiative Auger-Meitner recombination processes in III-nitride based optoelectronic devices operating in the visible spectral range have received significant attention in recent years as they can present a major contribution to the efficiency drop at high temperatures and carrier densities. However, insight into these recombination processes is sparse for III-N devices operating in the ultraviolet wavelength window. In this work we target the temperature dependence of the Auger-Meitner recombination rate in (Al,Ga)N/AlN quantum wells by means of an atomistic electronic structure model that accounts for random alloy fluctuations and connected carrier localisation effects. Our calculations show that in the low temperature regime both the non-radiative Auger-Meitner and radiative recombination rate are strongly impacted by alloy disorder induced carrier localisation effects in these systems. The influence of alloy disorder on the recombination rates is reduced in the high temperature regime, especially for the radiative rate. The Auger-Meitner recombination rate, however, may still be more strongly impacted by alloy disorder when compared to the radiative rate. Our calculations show that while on average radiative recombination slightly increases with increasing temperature, the Auger-Meitner recombination process may, on average, slightly decrease in the temperature range relevant to the thermal efficiency drop (thermal droop). This finding suggests that the considered Auger-Meitner recombination process is unlikely to be directly responsible for the thermal efficiency drop observed experimentally in (Al,Ga)N/AlN quantum well based light emitting devices. Thus, different non-radiative processes, external to the active region, may be the underlying cause of thermal droop in (Al,Ga)N wells.

Role Of Arsenic Clusters In Carrier Recombination In Low-Temperature Grown Algaas/Gaas Multiple Quantum Wells

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Spatially Resolved Luminescence Investigation of Algaas/Gaas Single Quantum Wires Modified by Selective Implantation and Annealing

Radiative and Nonradiative Recombination Processes in ZnCdSe∕ZnCdMgSe Multi-Quantum-wells

Effects of growth temperature and rapid thermal annealing on luminescence properties of InGaAs/GaAs multiple quantum wells

Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

The Excitonic Properties and Temperature Behaviour of the Photoluminescence from GaAs-GaAlAs Multiple Quantum Well Structures

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Hot Carrier Relaxation Processes in GaAs-GaAlAs Multiple Quantum Well Structures

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Carrier recombination dynamics in InGaN/GaN multiple quantum wells

Unusual Carrier Thermalization in a Dilute Ga As 1 − X N X Alloy

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Theoretical study of the temperature dependence of Auger-Meitner recombination in (Al,Ga)N quantum wells

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

Carrier Relaxation and Thermal Activation of Localized Excitons in Self-Organized InAs Multilayers Grown on GaAs Substrates.