Abstract:A comprehensive quantum transport study of ultrathin-body silicon double-gate pMOSFETs with gate length <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {14}$ </tex-math></inline-formula>, 10, and 7 nm is performed by in-house developed nonequilibrium Green’s function solver employing the six-band <inline-formula> <tex-math notation="LaTeX">${k} \cdot {p}$ </tex-math></inline-formula> Hamiltonian. The effects of channel length, body thickness, as well as confinement and transport crystal orientations are studied systematically. Both <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> characteristics are analyzed in this paper. Furthermore, the CMOS performance benchmarking results, such as switching delay, energy consumption, and their product, are calculated with the influence of parasitic resistances and capacitances treated in an appropriate way. It is found that the crystal orientation effect on drive current is significant at both long and short channel lengths, while its effect on effective capacitance is more observable at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm. The drive current at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {14}$ </tex-math></inline-formula> nm and <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm can be well explained by average ballistic hole velocity and source-to-drain tunneling ratio, respectively. Meanwhile, the effective capacitance is not only determined by the density of states but also affected by the distribution of holes in the confined direction. Both intrinsic and extrinsic performance assessments suggest that (001)/[100] and (110)/[001] are the optimal confinement/transport crystal orientation configurations at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {7}$ </tex-math></inline-formula> nm, while <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110}{)}/[\overline {1}\textsf {10}]$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110})/[\overline {1}\textsf {11}]$ </tex-math></inline-formula> are the best choices at longer gate lengths. As <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}$ </tex-math></inline-formula> shrinks, both intrinsic and extrinsic performances will be better at a scaled body thickness.

The Challenges for Physical Limitations in Si Microelectronics

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Si- and Ge-Based Electronic Devices

CMOS Technology for the Nanometer Regime

Sub-1-nm-node Beyond-Silicon Materials and Devices: Pathways,opportunities and Challenges

III-V/Ge MOS Device Technologies for Low Power Integrated Systems

Keynote; Material Challenges and Opportunities in Ge/III-V Channel MOSFETs

Recent Research Development of FinFETs

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs

Transistor Engineering Based on 2D Materials in the Post-Silicon Era

Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Challenges for 10 Nm MOSFET Process Integration

Fundamental limits of silicon technology

Review of Advanced CMOS Technology for Post-Moore Era

The future transistors

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Advances In Si-Based Nanotechnology And Quantum Devices

Challenges for InGaAs N-Mosfets in the Future Generation Sub-10Nm CMOS Logic Devices