Abstract:INTRODUCTION Gallium nitride (GaN) is of particular interest due to its direct wide band gap energy (3.4 eV), high breakdown field, high electron saturation velocity and outstanding physicochemical properties [1-2]. For device applications, a GaN film is generally prepared by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. However, in these heteroepitaxial GaN layers, the lattice and thermal mismatch between GaN and sapphire leads to a large number of dislocations [3]. As a result, flat, clean and undamaged surface is essential to form homo-epitaxial GaN layers with a low dislocation density [4]. However, GaN is very difficult to achieve an ideal polishing efficiency because of its high hardness and stable chemical properties [5]. Mechanical polishing with hard abrasives such as diamond and alumina particles can achieve flatness rapidly, but it can introduce scratch damages [6]. Wet etching can planarize GaN surface without damage by using photo electrochemical treatment, hot phosphoric acid, and molten KOH [7], but it produces rough surface. An etching method, which termed catalyst-referred etching (CARE) has been reported to produce an atomically flat damagefree surface of GaN [8], but the removal rate was just 3.4-3.8 nm/h [5]. Chemical-mechanical polishing (CMP) is considered to be an effective method to realize atomic-level smooth and damages free surface of materials. The studies of Hayashi et al.[9] suggested the importance of the selection of abrasive particles and led to the conclusion that abrasive should be softer than GaN to suppress the introduction of sub-surface damage layers. Colloidal silica based slurry is one of the possible candidates to achieve a damage free surface with a true CMP process as colloidal silica is much softer than GaN [10]. Hideo Aida et al. [11] reported the CMP process of gallium face of GaN with colloidal silica based slurry. In their studies, there were a lot of scratches generated during polishing process, which under the condition of abrasive particle size and concentration of 40nm and 40% respectively. It took him about 150 h to obtain damage-free surface. In our previous published work, we got damage-free surface within 9 h by using Al2O3 and colloidal silica slurry respectively [12]. The purpose of this work is to make clear of the principal influence factors in scratches on the surface of GaN during CMP process, to fulfill controllable and optimization CMP process, and provide a reference basis for the material removal mechanism of GaN.

Chemical polishing of sapphire for growth of GaN

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Chemical Mechanical Polishing of Freestanding GaN Substrates

Analysis of scratches generated on gan substrates during polishing

Effects of Catalyst Concentration and Ultraviolet Intensity on Chemical Mechanical Polishing of GaN

A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Investigation on the Surface Characterization of Ga-faced GaN after Chemical-Mechanical Polishing

Nanomaterials and Equipment for Chemical-Mechanical Polishing of Single-Crystal Sapphire Wafers

Investigation of CMP on GaN Substrate for Led Manufacturing

Atomically Smooth Gallium Nitride Surface Prepared by Chemical-Mechanical Polishing with Different Abrasives

Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching

Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82−-Fe2+ based slurry

Preparation of Controllable Double-Selective Etched Porous Substrate for HVPE Growth of GaN Crystals with Excellent Optical Properties

Mechanism of GaN CMP Based on H2O2 Slurry Combined with UV Light

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

Effect of photocatalytic oxidation technology on GaN CMP

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Chemical mechanical polishing (CMP) anisotropy in sapphire