Investigation on electrical properties of heavily boron-doped polycrystalline diamond film by Van der Pauw's method

Guanghua Chen,Xingwang Zhang,YaYing Ji
1997-01-01
Abstract:Boron-doped polycrystalline diamond films were synthesized by thermal filament chemical vapor deposition technique using boron trioxide (B2O3) as impurity source. The resistivity, the Hall mobility and the concentration of samples were measured by Van der Pauw's method in various temperature. The experimental results show that the activation energy of the heavily boron-doped polycrystalline diamond film is 0.078eV, and the Hall mobility of the sample is only about 18cm2��V-1��s-1 at room temperature which is much smaller than that of natural crystalline diamond. The conductive and scattering mechanism is also analyzed from the experimental results.
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