Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Coexistence of Wurtzite Gan with Zinc Blende and Rocksalt Studied by X-Ray Power Diffraction and High-Resolution Transmission Electron Microscopy

ChemInform Abstract: GaN Crystals Prepared Through Solid‐State Metathesis Reaction from NaGaO2 and BN under High Pressure and High Temperature.

A Benzene-Thermal Metathesis Route to Pure Metastable Rocksalt GaN

Ab Initio Molecular Dynamics Simulation of Structural Transformation in Zinc Blende GaN under High Pressure

Structural Phase Transitions in High-Pressure Wurtzite to Rocksalt Phase in GaN and SiC

Structure and Photoluminescence of Wurtzite/zinc-Blende Heterostructure GaN Nanorods

Quasi-in-situ Study of Wurtzite/zinc-Blende GaN Nanowires by TEM and Cathodoluminescence

Synthesis and high-pressure transformation of metastable wurtzite-structured CuGaS2 nanocrystals.

Microscopic Mechanism of the Wurtzite-to-rocksalt Phase Transition of the Group-Iii Nitrides from First Principles

Compression-Induced Phase Transition Of Gan Bulk From Wurtzite Phase To Five-Fold Coordination Hexagonal Phase

Electronic Structures of Wurtzite Gan with Ga and N Vacancies

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Electronic Structure and Phase Transformation in Znse: an Ab Initio Study

Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires

First principles investigation on anomalous lattice shrinkage of W alloyed rock salt GeTe

A Study On Self-Assembled Gan Nanobelts By A New Method: Structure, Morphology, Composition, And Luminescence

In Situ XAFS Investigation on Zincblende ZnS Up to 31.7 GPa

Investigation on the Origin of Wurtzite Domains in Thick Cubic Gan Using Reactive Ion Etching

Electronic and optical properties of wurtzite GaN: A theoretical approach

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires