Abstract:The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 [Formula: see text] 1013/cm2, and the capture cross section is [Formula: see text] = 8.5 [Formula: see text] 1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu-Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test.

Transient Photovoltaic Investigations of a Schottky-type Porous Silicon Diode

Transient Electroluminescence Behavior and Mechanism of A Schottky-Type Porous Silicon Diode

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

Temperature-dependent Picosecond Time-Resolved Carrier Dynamics in Visible-Light-emitting Porous Silicon

Laser-induced Damage in a Silicon-Based Photodiode by MHz Picosecond Laser

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

Structural, Optical and Electrical Behavior of Millisecond Pulse Laser Damaged Silicon-Based Positive-Intrinsic-Negative Photodiode

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Microsecond Photoluminescence Decay and Oxidation of Porous Silicon

Investigation of the Transient Phase Change of Silicon Irradiated by CW Fiber Laser

Study of Photon-Trapping Phenomenon in Porous Silicon Layer

Multiphoton excitations in porous silicon

Study on carrier dynamics of perovskite solar cells via transient absorption

Response properties of photovoltaic detectors irradiated under femtosecond pulses#

Numerical simulation of thermal and stress field in silicon-based positive-intrinsic-negative photodiode irradiated by millisecond-pulsed laser

Steplike Behavior of Photoluminescence Peak Energy and Formation of P-Type Porous Silicon

Excitation Wavelength-Dependent Carrier Dynamics In N-Type And Semi-Insulating 6h-Sic Using Ultrafast Transient Absorption Spectroscopy

Output properties of photovoltaic detectors irradiated under femtosecond pulses

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect