Abstract:The lattice quality of strain superlattice structures in Quantum Cascade Lasers (QCLs) directly influences the photoelectric properties and service life of the lasers. However, the evaluation method for lattice quality on the nanoscale is not very well developed at present, especially for interface lattice quality assessment. In this investigation, all atoms positioned in the multiple interface layers can be simultaneously and accurately determined through Subset Geometric Phase Analysis (S-GPA) combined with a Peak Finding (PF) method and an Optimal Approximation Algorithm (OAA) with a sensitivity of about 0.04 Å. Based on the determined interface location, the strain distribution in all layers of the superlattice structure was simultaneously measured using the improved S-GPA by means of the optimal selection of multiple reference areas. A quantitative evaluation of the strain/stress compensation effect was then carried out based on the theoretical model of elastic mechanics. The proposed method was successfully applied to evaluating the lattice quality of an In0.6Ga0.4As/In0.44Al0.56As superlattice structure grown by Molecular Beam Epitaxy (MBE). The obtained results show that the interface lattices are almost perfect with a uniform thickness of layers, without any defects and stress concentration. Each In0.44Al0.56As layer and adjacent In0.6Ga0.4As layers provided effective strain/stress compensation for each other, reducing the possibility of forming dislocations. In one period, the active region has been properly strain-balanced to give a nearly net zero strain. The proposed method can not only be applied in evaluating the growth quality of the superlattice structure with a large field of view, but also provide quantitative experimental data for further improving the superlattice design.

Multilayer structure stress distribution calculation applicable to stress design of GaAlAs/GaAs heterostructure emitting devices

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Effects of Heterogeneity and Prestress Field on Phonon Properties of Semiconductor Nanofilms

Stress Mapping of a Strain Superlattice Using Scanning Moiré Fringe Imaging

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Quantitative Evaluation of the Interface Lattice Quality of a Strain Superlattice by Strain Analysis.

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Simulating Stress-Tunable Phonon and Thermal Properties in Heterostructured AlN/GaN/AlN-nanofilms

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice

Calculation of Thermal Stress in Microstructure Fabricated by Multilayer Thin Films

First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

The strain-stress relationships for coherent in-plane strain in heterostructures with monoclinic crystal systems: $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ on $(h0l)$ $β$-Ga$_2$O$_3$ as example

New expression of excess stress and the stability of buried strained heterostructures

Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells

Study of strain distribution in GeSi/Si strained heterostructure

Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition

Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide