Investigation of Regime Switching from Mode Locking to Q-switching in a 2 Μm InGaSb/AlGaAsSb Quantum Well Laser
Xiang Li,Hong Wang,Zhongliang Qiao,Xin Guo,Wanjun Wang,Geok Ing Ng,Yu Zhang,Yingqiang Xu,Zhichuan Niu,Cunzhu Tong,Chongyang Liu
DOI: https://doi.org/10.1364/oe.26.008289
IF: 3.8
2018-01-01
Optics Express
Abstract:A two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 μm is presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive mode locking at ~18.40 GHz, Q-switched mode locking, and passive Q-switching are observed in this laser. In the Q-switched mode locking regimes, the Q-switched RF signal and mode locked RF signal coexist, and the Q-switched lasing and mode-locked lasing happen at different wavelengths. This is the first observation of these three pulsed working regimes in a GaSb-based diode laser. An analysis of the regime switching mechanism is given based on the interplay between the gain saturation and the saturable absorption.