Two-state Stochastic Models for Memory in Ion Channels.

JQ Fang,TY Ni,CZ Fu,J Fan,YY Guan
1996-01-01
Abstract:AIM:To study quantitatively the memory existing in ion channels.METHODS:Stochastic processes were used to model 2 categories of memory (short-term and long-term) by persisting in the standpoint of two-state, instead of multiple states, but with different transition mechanism.RESULTS:A two-state Markov process with constant transition intensities well fitted the short-term memory and a two-state Markov process within a kind of random environment well fitted the long-term memory. Statistical procedures for parameter estimation were proposed and demonstrated with 2 real examples on the channels of PC12 cells.CONCLUSION:The memory in ion channels can be quantitatively modelled as stochastic process with 2 states.
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