Abstract:The Hodgkin-Huxley model describes the conduction of the nervous impulse through the axon, whose membrane's electric response can be described employing multiple connected electric circuits containing capacitors, voltage sources, and conductances. These conductances depend on previous depolarizing membrane voltages, which can be identified with a memory resistive element called memristor. Inspired by the recent quantization of the memristor, a simplified Hodgkin-Huxley model including a single ion channel has been studied in the quantum regime. Here, we study the quantization of the complete Hodgkin-Huxley model, accounting for all three ion channels, and introduce a quantum source, together with an output waveguide as the connection to a subsequent neuron. Our system consists of two memristors and one resistor, describing potassium, sodium, and chloride ion channel conductances, respectively, and a capacitor to account for the axon's membrane capacitance. We study the behavior of both ion channel conductivities and the circuit voltage, and we compare the results with those of the single channel, for a given quantum state of the source. It is remarkable that, in opposition to the single-channel model, we are able to reproduce the voltage spike in an adiabatic regime. Arguing that the circuit voltage is a quantum variable, we find a purely quantum-mechanical contribution in the system voltage's second moment. This work represents a complete study of the Hodgkin-Huxley model in the quantum regime, establishing a recipe for constructing quantum neuron networks with quantum state inputs. This paves the way for advances in hardware-based neuromorphic quantum computing, as well as quantum machine learning, which might be more efficient resource-wise.

Quantum memory circuit for ion channel dynamics in the nervous system

Quantized Three-Ion-Channel Neuron Model for Neural Action Potentials

Dynamical Quantum Memories

Quantized Single-Ion-Channel Hodgkin-Huxley Model for Quantum Neurons

Dynamical Oscillator-Cavity Model for Quantum Memories

Quantification of the memory effect of steady-state currents from interaction-induced transport in quantum systems

A Quantum-mechanical description of ion motion within the confining potentials of voltage gated ion channels

Two-state Stochastic Models for Memory in Ion Channels.

Long-term memory and synapse-like dynamics in two-dimensional nanofluidic channels

Memristive response and capacitive spiking in the aqueous ion transport through 2D nanopore arrays

Quantum control in artificial neurons with superconductor-ionic memory inserted in the feedback

Short-term plasticity as 'energetic memory' of ion channel components of action potential

Kondo Memory in Driven Strongly Correlated Quantum Dots

Hysteresis and Self-Oscillations in an Artificial Memristive Quantum Neuron

Memory Effect and Non-Markovian Dynamics in an Open Quantum System

Quantum Memory Effects in Disordered Systems and Their Relation to 1/f Noise

Quantum Interference of Stored Coherent Spin-wave Excitations in a Two-channel Memory

Photonic quantum memory in two-level ensembles based on modulating the refractive index in time: equivalence to gradient echo memory

Memory effects in complex materials and nanoscale systems

Integrated Optical Quantum Memory Controlled by Electro-Optic Effect

Iontronic Neuromorphic Signaling with Conical Microfluidic Memristors