THE THERMOSTABILITY OF THE FE16N2 PHASE DEPOSITED ON A GAAS SUBSTRATE BY ION-BEAM-ASSISTED DEPOSITION

J HAI,T KUN,HD LI
1994-01-01
Abstract:An Fe-N film was deposited on a GaAs(100) substrate by ion-beam-assisted deposition at an N/Fe atomic arrival ratio of 0.12. The results from x-ray diffraction showed that the film consisted of the Fe16N2 phase. The results of an annealing experiment indicated that die Fe16N2 phase formed is stable after annealing at 150-degrees-C. At 200-degrees-C, the Fe16N2 started to decompose to alpha-Fe and gamma'-Fe4N, and it converted to alpha-Fe and gamma'-Fe4N completely at 300-degrees-C. The magnetic properties of films annealed at different temperatures were also measured and the results are discussed.
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